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Faraday Unveils FlashKit™-22RRAM: An eNVM-Based SoC Development Platform for IoT
Faraday Unveils FlashKit™-22RRAM: An eNVM-Based SoC Development Platform for IoT

Business Wire

time2 days ago

  • Business
  • Business Wire

Faraday Unveils FlashKit™-22RRAM: An eNVM-Based SoC Development Platform for IoT

HSINCHU, Taiwan--(BUSINESS WIRE)--Faraday Technology Corporation (TWSE: 3035), a leading ASIC design service and IP provider, today introduced its latest FlashKit™ development platform, FlashKit™-22RRAM, designed to accelerate high-performance IoT and MCU applications. Built on UMC's 22ULP process, FlashKit™-22RRAM combines embedded Resistive RAM (RRAM, ReRAM) technology with a rich IP ecosystem and development-ready support, providing a cost-effective and power-efficient SoC solution for edge devices. Accelerate IoT and MCU SoC design and launch faster with FlashKit™-22RRAM The FlashKit™-22RRAM platform integrates a full-featured RRAM subsystem with DWORD access, delivering comparable performance with SST eFlash. This solution minimizes extra-mask requirements, making it highly suitable for consumer-grade eNVM applications, such as AIoT, smart home, wearables, and portable devices. It is silicon proven and fully prepared to support customers' fast ramp-up to volume production on UMC's 22ULP node. FlashKit™-22RRAM supports embedded CPU options including ARM Cortex-M7 and VeeR EH1 RISC-V, and integrates a comprehensive set of integrated IPs such as USB 3.0 Type-C, GMAC, and PLL. A built-in RRAM controller with built-in self-test (BIST) ensures streamlined data access and high production reliability. In additional, embedded FPGA (eFPGA) block is included for enhanced design flexibility and enabling post-silicon logic change, ECO, or GPIO re-assignment. 'FlashKit™-22RRAM demonstrates Faraday's continued commitment to delivering optimized platforms that reduce development effort and accelerate time-to-market,' said Flash Lin, COO of Faraday Technology. 'Our customers now have a highly integrated and cost-efficient path to bring differentiated eNVM-based products to market quickly, with the flexibility to scale for future needs.' About Faraday Technology Corporation Faraday Technology Corporation (TWSE: 3035) is dedicated to the mission of benefiting humanity and upholding sustainable values in every IC it handles. The company offers a comprehensive range of ASIC solutions, including 2.5D/3D Advanced packaging, Arm Cortex-A, R, M, A720AE, Neoverse CSS integration and hardening, FPGA-Go-ASIC, and design implementation services. Furthermore, its extensive silicon IP portfolio encompasses a wide array of offerings, such as I/O, Cell Library, Memory Compiler, DDR/LPDDR, MIPI D-PHY, V-by-One, USB, Giga Ethernet, SATA, PCIe, and SerDes. For further information, visit or follow Faraday on LinkedIn.

Weebit Nano and DB HiTek to demonstrate chips integrating Weebit ReRAM at PCIM 2025
Weebit Nano and DB HiTek to demonstrate chips integrating Weebit ReRAM at PCIM 2025

Yahoo

time30-04-2025

  • Business
  • Yahoo

Weebit Nano and DB HiTek to demonstrate chips integrating Weebit ReRAM at PCIM 2025

Weebit's ultra-low-power, high-density NVM moves towards qualification in DB HiTek's BCD 130nm process HOD HASHARON, Israel and SEOUL, South Korea, April 30, 2025 (GLOBE NEWSWIRE) -- Weebit Nano Limited (ASX:WBT) (Weebit), a leading developer and licensor of advanced memory technologies for the global semiconductor industry, and tier-1 semiconductor foundry DB HiTek will show the first demonstration of DB HiTek's Bipolar-CMOS-DMOS (BCD) silicon integrating Weebit's Resistive Random-Access Memory (ReRAM) non-volatile memory (NVM) technology at PCIM 2025. PCIM is Europe's largest power semiconductor exhibition, being held in Nuremberg, Germany, from May 6-8, 2025. This is the latest step in the continued collaboration between the companies as they progress towards full qualification of Weebit's embedded ReRAM module in DB HiTek's 130nm BCD process, expected later this year. This process is ideal for analog, mixed-signal and high-voltage designs in consumer, industrial, IoT, and a range of other applications. Weebit ReRAM IP provides a high-density, low-power embedded NVM for these applications that is cost effective and has proven excellent retention at high temperatures. The edge AI demonstration, running on DB HiTek chips with embedded Weebit ReRAM, shows an application of gesture recognition. It was developed in collaboration with Nanoveu's (ASX: NVU) Embedded AI Systems Pte. Ltd. (EMASS) and will be shown in DB HiTek's booth 680 in Hall 7 at PCIM. Coby Hanoch, CEO of Weebit Nano, said: 'Our collaboration with DB HiTek, one of the world's leading foundries for mixed-signal and power integrated circuits, continues strongly and we are advancing steadily towards making our ReRAM IP available for production in its 130nm BCD process. This demo will provide a first look at the integrated technology and show the advantages of integrating ReRAM on-chip.' Ki-Seog Cho, CEO, DB HiTek, said: 'Weebit ReRAM provides a cost-effective and high-density non-volatile memory in our 130nm BCD process. We look forward to demonstrating the advantages of this innovative embedded IP to designers at PCIM. PCIM is a key show for DB HiTek as we expand our footprint in the growing European market, and we are delighted that Weebit will join us in our booth to highlight our integrated solution.' Weebit ReRAM will be qualified in DB HiTek's BCD 130nm process and ready for production in calendar 2025. Once qualified, DB HiTek will add Weebit's memory module to its BCD 130nm Process Design Kit (PDK). DB HiTek customers can use the standard 1Mb modules in the PDK or have modules customized for their needs. Weebit ReRAM is available now to select DB HiTek customers for design prototyping. About DB HiTek Headquartered in South Korea, DB HiTek Co., Ltd. is world leader in specialty foundry with a broad range of support services plus a robust portfolio of competitive process technologies that include Analog/Power (BCDMOS), CMOS Image Sensor (CIS), Mixed-Signal, High Voltage CMOS, RF HRS/SOI CMOS, Super Junction MOSFET technologies. For more information, visit About Weebit Nano Limited Weebit Nano Ltd. is a leading developer and licensor of advanced semiconductor memory technology. The company's ground-breaking Resistive RAM (ReRAM) non-volatile memory (NVM) addresses the growing need for significantly higher performance and lower power memory solutions in a range of electronic products such as AI, Internet of Things (IoT) and wearable devices, automotive, industrial automation, robotics, neuromorphic computing, and many others. For these applications, Weebit ReRAM allows semiconductor memory elements to be significantly faster, less expensive, more reliable and more energy efficient than those using existing flash memory solutions. As it is based on fab-friendly materials, the technology can be quickly and easily integrated with existing flows and processes, without the need for special equipment or large investments. See Weebit Nano and the Weebit Nano logo are trademarks or registered trademarks of Weebit Nano Ltd. in the United States and other countries. Other company, product, and service names may be trademarks or service marks of others. Media – USJen Bernier-Santarini, Weebit NanoP: +1 650-336-4222E: jen@ Media – AustraliaDylan Mark, Automic GroupP: +61 475 783 675E: InvestorsDanny Younis, Automic GroupP: +61 420 293 042E:

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