Latest news with #AhnHyun
Korea Herald
22-05-2025
- Business
- Korea Herald
SK hynix Develops UFS 4.1 Solution Based on 321-High NAND
SEOUL, South Korea, May 22, 2025 /PRNewswire/ -- SK hynix Inc. (or "the company", announced today that it has developed UFS 4.1 solution product adopting the world's highest 321-layer 1Tb triple level cell 4D NAND flash for mobile applications. The development comes amid increasing requirements for high performance and low power of a NAND solution product to ensure a stable operation of on-device AI. The company expects the UFS 4.1 product, optimized for AI workload, to help enhance its memory leadership in the flagship smartphone markets. With an increase in demand for on-device AI leading to greater importance of the balance between computation capabilities and battery efficiency of a device, the mobile market is now requiring thinness and low power from a mobile device. The latest product comes with a 7% improvement in power efficiency, compared with the previous generation based on 238-high NAND and a slimmer 0.85mm thickness, down from 1mm before, to fit into a ultra-slim smartphone. The product also supports data transfer speed of 4300MB/s, the fastest sequential read* for a fourth-generation of UFS, while providing the best-in-class performance by also improving random read and write speed**, critical for multitasking, by 15% and 40%, respectively. Immediate provision of the required data for on-device AI and faster running speed and the responsivity of an application are expected to enhance user experience. SK hynix plans to win customer qualification within the year and ship in volume from the first quarter of next year. The product will be provided in two capacity types – 512GB and 1TB. Ahn Hyun, President and Chief Development Officer, said that SK hynix plans to complete development of the 321-high 4D NAND-based SSD for both consumers and data centers within the year. "We are on track to expand our position as a full-stack AI memory provider in the NAND space by building a product portfolio with AI technological edge." About SK hynix Inc. SK hynix Inc., headquartered in Korea, is the world's top tier semiconductor supplier offering Dynamic Random Access Memory chips ("DRAM") and flash memory chips ("NAND flash") for a wide range of distinguished customers globally. The Company's shares are traded on the Korea Exchange, and the Global Depository shares are listed on the Luxembourg Stock Exchange. Further information about SK hynix is available at
Korea Herald
22-05-2025
- Business
- Korea Herald
SK hynix unveils world's highest 321-layer NAND chips
South Korean chipmaker SK hynix said Thursday it had developed a universal flash storage chip integrating the world's highest 321-layer 1 terabit NAND flash technology, providing enhanced speed and power efficiency for mobile devices with on-device AI. The UFS 4.1 product was developed in response to growing demand for NAND solutions that combine high performance with low power consumption to support reliable operation of AI-powered mobile devices, the company explained. 'Through UFS 4.1, which is optimized for AI workloads, we will strengthen our leadership in the smartphone memory market," the firm said in a statement. The UFS 4.1 solution is 7 percent more power efficient than the previous model, which used 238-layer NAND, according to the company. The chip is also slimmer at 0.85 millimeters thick, down from 1 mm in the previous model, making it more suitable for ultra-slim devices. Key performance improvements include a sequential read speed of 4,300 megabytes per second, the fastest among fourth-generation UFS products. Random read and write speeds, key metrics for multitasking in mobile devices, have improved by 15 percent and 40 percent, respectively, compared to the previous generation. The company said the improved performance is expected to deliver data for on-device AI operations without delay, while allowing faster and more responsive app launches to enhance overall user experience. SK hynix said it would send sample shipments of the product, which comes in 512-gigabyte and 1-terabyte capacities, to customers within this year. Mass production is expected to begin in the first quarter of next year. Ahn Hyun, chief development officer at SK hynix, said the company planned to complete development of both consumer and data center solid-state drives based on 321-layer 4D NAND within this year. "We are on track to expand our position as a full-stack AI memory provider in the NAND space by building a product portfolio with an AI technological edge," said Ahn.
Korea Herald
22-05-2025
- Business
- Korea Herald
SK hynix develops new flash storage chip using 321-layer NAND
SK hynix Inc. said Thursday it has developed a mobile universal flash storage chip based on the world's highest 321-layer 1 terabit NAND flash technology, delivering faster, more power-efficient data processing tailored for on-device artificial intelligence. The new UFS 4.1 product offers a 7 percent improvement in power efficiency compared with the previous generation, which used 238-layer NAND, according to SK hynix. At just 0.85 millimeter thick, slimmer than the previous 1-mm model, the chip is designed to fit into ultra-slim smartphones. It supports sequential read speeds of 4,300 megabytes per second, the fastest for any fourth-generation UFS product to date. In addition, it delivers best-in-class performance with random read and write speeds improved by 15 percent and 40 percent, respectively. SK hynix said the new UFS 4.1 will meet growing market demands for high performance and low power consumption in NAND solutions, ensuring stable operation for AI-powered mobile devices. "We are on track to expand our position as a full-stack AI memory provider in the NAND space by building a product portfolio with an AI technological edge," said Ahn Hyun, chief development officer at SK hynix. (Yonhap)
