Latest news with #GaN-on-Si
Yahoo
14-05-2025
- Business
- Yahoo
Finwave Semiconductor Secures $8.2M in Funding to Fuel Market Push and Unlock True Potential of GaN-on-Si for 5G/6G Networks
Investor Confidence Key to Company's Next Phase: Productizing Disruptive GaN-on-Si Technology to Address Increasing Performance and Efficiency Demands Finwave high-power RF switch WALTHAM, Mass., May 14, 2025 (GLOBE NEWSWIRE) -- Leading GaN (Gallium Nitride) technology innovator Finwave Semiconductor, Inc. today announced a new $8.2M bridge investment round, led by Fine Structure Ventures, Engine Ventures, and Safar Partners – with strategic participation from technology partner GlobalFoundries. This new funding signals strong conviction from investors and industry leaders in the market potential of Finwave's unique GaN-on-Si technology as the company transitions from a technology-centric innovator to a product-driven company poised to deliver real-world solutions. 'We are emboldened by the support of our investors, who share our belief in the commercial potential of our technology,' said Dr. Pierre-Yves Lesaicherre, CEO of Finwave. 'This funding round validates the years of engineering and innovation behind our proprietary GaN-on-Si technology and provides resources we need to move from the development phase to delivering differentiated, high-performance products. More than just funding, this is a clear endorsement of our direction – and a strong signal that the industry believes in the path we're on.' Finwave will use this investment to accelerate revenue generation, expand its product portfolio and continue developing innovative GaN-on-Si technology for the following targeted market segments: High-Power RF Switches, Power Amplifiers for communications infrastructure, and Power Amplifiers for mobile devices. 'Since our initial investment, Finwave has made remarkable progress towards becoming a leader in GaN-on-Si high-performance RF components,' said Jennifer Uhrig, Senior Managing Director, Fine Structure Ventures. 'Their strategic foundry partnership with GlobalFoundries and distribution partnership with RFMW have been particularly notable, legitimizing their design capabilities and giving customers confidence in Finwave's ability to bring high-performance, reliable products to market.' GaN is quickly becoming one of the most promising semiconductor technologies destined to power both the future of communication and sustainability. Finwave's GaN-on-Si technology improves on the superior performance of GaN solutions while adopting the cost and scale of manufacturing advantages from high-volume CMOS silicon wafers. The company's product portfolio includes high-power RF switches, which are now globally available due to Finwave's partnership with leading RF distributor RFMW, as well as upcoming RF power amplifiers. Additional Investors Speak Out "As early investors in Finwave, we've had the privilege of supporting the team as they advanced their MIT RF semiconductor technology, achieving world-record RF performance. We're excited to invest again as Finwave enters its commercial phase, scaling production with its foundry and distribution partners."— Reed Sturtevant, General Partner, Engine Ventures "Safar Partners is very excited to support Finwave's mission to enable the newest wave of semiconductor capabilities utilizing Gallium Nitride (GaN). Many industries will benefit a great deal from the Finwave platform in the coming years."— Arunas Chesonis, Managing Partner, Safar Partners With a product roadmap designed to harness the full potential of GaN, Finwave is committed to delivering cost-effective RF devices, delivering enhanced performance, and enabling more efficient RF systems. Finwave's unique and highly differentiated GaN-on-Si RF chips are targeted to a wide-array of RF applications, including communications infrastructure (base stations, MIMO, small cells, land mobile radios, customer premise equipment, fixed wireless access), Wi-Fi routers, satellite, radar, drones, anti-drones, test & measurement equipment, and medical equipment. To learn more, visit About Finwave Semiconductor, Semiconductor is shaping the future with innovative transistor designs and breakthrough process technology that unlock the full potential of Gallium Nitride (GaN). Founded by prominent MIT innovators, the company is driving revolutionary advancements for 5G and 6G mobile infrastructure, smartphones, medical devices, and cloud computing. Finwave's portfolio includes award-winning GaN FinFETs, advanced E-mode MISHEMTs, and high-performance RF switches. For more information, visit or follow the company on LinkedIn. Media Contact: Stephanie Olsen Lages & Associates(949) 453-8080stephanie@ A photo accompanying this announcement is available at in retrieving data Sign in to access your portfolio Error in retrieving data Error in retrieving data Error in retrieving data Error in retrieving data
Yahoo
16-04-2025
- Automotive
- Yahoo
Polar Signs Agreement with Renesas to License GaN-on-Si Technology and Onshore Commercial Fabrication of Advanced Devices on 200mm Wafers
The Partnership Strengthens the Domestic Supply Chain and Enhances Access of this Dual-Use Technology to the U.S. Customer Base BLOOMINGTON, Minn., April 16, 2025--(BUSINESS WIRE)--Polar Semiconductor ("Polar"), the only U.S.-owned merchant foundry specializing in sensor, power, and high-voltage semiconductors, announced today the finalization of a strategic agreement with Renesas Electronics Corporation ("Renesas") to license their Gallium Nitride on Silicon D-Mode (GaN-on-Si) technology. As part of this agreement, Polar will fabricate High Voltage 650V Class GaN-on-Si devices for Renesas and other customers in its 200mm automotive quality high-volume manufacturing facility in Minnesota. This facility, recently expanded with state-of-the-art processing and automation equipment, is poised to meet growing demand for next-generation semiconductor solutions. Polar and Renesas will work together to scale commercial production of GaN devices, expanding its use across critical industries, including automotive, data center, consumer, industrial, and aerospace & defense markets. The agreement ensures the U.S. has a reliable, domestic source for this cutting-edge semiconductor technology. Market adoption of GaN technology will be accelerated through cost efficiency and innovative device architectures enabled by scaling to 200mm fabrication. By leveraging Polar's manufacturing expertise and Renesas' proven power semiconductor technology and commercial leadership, this strategic collaboration ensures customers a secure supply of cost-competitive, superior quality, and high-performance GaN device wafers. Surya Iyer, President and COO of Polar Semiconductor said, "This licensing and commercial production agreement underscores our commitment to strengthening the domestic semiconductor ecosystem. GaN is a game-changing technology for Power and RF, and with Renesas as our partner, we are well-positioned to ramp commercial production, secure key defense programs, and drive the next wave of semiconductor innovation." "We are excited to partner with Polar to scale our proven GaN technology to 200mm wafers and leverage our know-how across broad power conversion markets ranging from Infrastructure & AI to Energy & Industrial to e-Mobility & xEVs to high-value IoT," said Chris Allexandre, SVP & GM, Power Products Group, at Renesas. "This collaboration ensures a strong, U.S.-based manufacturing capability for GaN products, provides multi-sourcing to our customers, and meets the growing demand for high-performance power solutions." About Polar Semiconductor Headquartered in Bloomington, Minnesota, Polar Semiconductor is the only U.S.-based merchant foundry specializing in sensor, power, and high-voltage semiconductors. With over 60 years of experience in automotive, consumer, and industrial markets, Polar is investing significantly to expand its foundry and introduce cutting-edge technologies. As an automotive-qualified fab, Polar is committed to the highest levels of manufacturing and product quality. For more information, visit View source version on Contacts Polar Semiconductor952-876-3390info@ Sign in to access your portfolio
Yahoo
03-03-2025
- Business
- Yahoo
Finwave Semiconductor Announces Global Distribution Agreement with RFMW
Partnership Expands Access to Finwave's Leading-Edge GaN-on-Si RF Chips Finwave RF Switch Wafer Testing WALTHAM, Mass., March 03, 2025 (GLOBE NEWSWIRE) -- Leading GaN (Gallium Nitride) technology innovator Finwave Semiconductor, Inc. has strengthened its commitment to addressing the increasingly demanding wireless communication landscape by signing a global distribution agreement with RFMW. This partnership represents a significant step in Finwave's evolution from a technology-driven company to a product-driven company. The premier distributor of radio frequency (RF), microwave semiconductors, and components, RFMW delivers leading-edge RF semiconductor chips to a vast array of customers and applications worldwide. By adding Finwave's portfolio – which includes high-power RF switches and upcoming RF power amplifiers – RFMW enhances its line card, filling a key gap and broadening its offerings to customers. With a product roadmap designed to harness the full potential of GaN, Finwave is committed to delivering cost-effective RF devices, delivering enhanced performance and enabling more efficient RF systems. Finwave's unique and highly differentiated GaN-on Si RF chips are targeted to a wide-array of RF applications, including communications infrastructure (base stations, MIMO, small cells, land mobile radios, customer premise equipment, fixed wireless access), Wi-Fi routers, satellite, radar, drones, anti-drones, test & measurement equipment, and medical equipment. 'RFMW is excited to partner with Finwave to bring their cutting-edge GaN-on-Si technology to our customers,' said Joel Levine, President, RFMW. 'Finwave's innovative solutions deliver exceptional bandwidth and power performance, aligning perfectly with our commitment to providing best-in-class RF and microwave components. This partnership enables us to support our customers with high-efficiency, next-generation products that drive advancements in 5G, aerospace, and defense applications.' 'This is an exciting time for Finwave as we transition from technology development to the commercialization of RF products based on our unique and highly differentiated GaN-on-Si RF technology,' said Finwave Semiconductor CEO Dr. Pierre-Yves Lesaicherre. 'Our partnership with RFMW is a strong validation that our innovative technology can deliver high-performance solutions for a wide range of customers and applications worldwide. By working with RFMW, we are significantly expanding access to our cutting-edge GaN-on-Si RF chips, reaching customers who may not have been aware of Finwave or previously had access to our products.' Evaluation kits and product samples will be available from RFMW later this month, with the global release of Finwave's first RF switches planned for April 2025. This week at MWC25 in Barcelona, Finwave will host meetings in Hall 2, #2D12MR to provide updates on the performance and availability of its forthcoming RF switch lineup as well as the company's future power amplifier products. Please connect with Finwave at marten@ for more information or to schedule an appointment. To learn more, visit About Finwave Semiconductor, Semiconductor is shaping the future with innovative transistor designs and breakthrough process technology that unlock the full potential of Gallium Nitride (GaN). Founded by prominent MIT innovators, the company is driving revolutionary advancements for 5G and 6G mobile infrastructure, smartphones, medical devices, and cloud computing. Finwave's portfolio includes award-winning GaN FinFETs, advanced E-mode MISHEMTs, and high-performance RF switches. For more information, visit or follow the company on LinkedIn. Media Contact:Stephanie OlsenLages & Associates(949) 453-8080stephanie@ A photo accompanying this announcement is available at
South China Morning Post
21-02-2025
- Science
- South China Morning Post
China cracks GaN chip defect mystery, boosting tech war edge
Published: 8:00pm, 21 Feb 2025 Researchers in China say they have pinpointed the main cause of defects in a semiconductor material considered key to boosting the performance of advanced chips used in electronic warfare and other critical sectors that are at the centre of China's tech rivalry with the United States. Gallium nitride (GaN), a third-generation semiconductor material, is widely used in devices such as chargers, 5G base stations, radar systems, military communications, and aerospace applications. China produces 98 per cent of the world's gallium, and Beijing recently banned exports of the material to the US, making it more difficult – and costly – for the Pentagon to acquire GaN-based chips. The stakes are high: if China can develop low-cost, high-performance GaN manufacturing techniques, it could expand the existing price gap in semiconductor products between the two nations. Chinese-made gallium-nitride-on-silicon (GaN-on-Si) power chips. Photo: Innoscience GaN fabrication typically uses substrates like silicon and sapphire to support growth. But the process can create misalignments in the crystal structures – referred to as dislocation defects – which lead to local leakage. Such flaws can significantly reduce the performance of GaN-based materials, and therefore, devices.
