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RIR Power Electronics surges after expanding SiC diodes production capacity
RIR Power Electronics surges after expanding SiC diodes production capacity

Business Standard

time2 days ago

  • Automotive
  • Business Standard

RIR Power Electronics surges after expanding SiC diodes production capacity

RIR Power Electronics jumped 4.49% to Rs 2859.85 after the company announced successful production expansion and shipment of 1200V SiC diodes from Taiwan. The company stated that the expansion of production was made possible through a strategic collaboration with a contract fab at Pro Asia Semiconductor Corporation (PASC), Taiwan and by leveraging technology IP that RIR Power had acquired from Sicamore Semi, USA. The product portfolio includes 1200V Schottky Barrier Diodes (SBDs) ranging from 2 amps to 60 amps, addressing the most common ratings used across multiple applications and markets globally. The company further said that it has already secured purchase orders for the said diodes from Richardson Electronics (USA) and Ankit Plastics (India), both key suppliers to the commercial, industrial and defence sectors. Besides being able to serve existing domestic Indian and the USA customers, shipping from Taiwan would provide RIR Power Electronics improved access to strategic high-growth markets for SiC devices in the South East Asian region. Dr. Harshad Mehta, chairman & director, RIR Power Electronics, said: This achievement marks a significant leap for RIRs power electronics manufacturing capabilities and helps to expedite the ramp up and shipment of SiC devices on 6-Inch wafers from RIRs proposed Odisha Fab. By successfully scaling up world-class SiC technology, RIR Power is positioned to serve global high-growth markets including automotive, industrial, renewable energy, and defence, while strengthening the domestic semiconductor ecosystem. RIR Power Electronics is a global pioneer in high-power semiconductor solutions. Its product portfolio comprises of high-performance semiconductor devices, assemblies, and energy management systems. The company's consolidated net profit declined 12.59% to Rs 2.43 crore despite a 22.67% increase in net sales to Rs 26.46 crore in Q4 FY25 as compared with Q4 FY24.

RIR expands manufacturing and shipment of 1200V SiC diodes from Taiwan
RIR expands manufacturing and shipment of 1200V SiC diodes from Taiwan

Business Standard

time3 days ago

  • Automotive
  • Business Standard

RIR expands manufacturing and shipment of 1200V SiC diodes from Taiwan

RIR Power Electronics announced the successful production expansion and shipment of 1200V SiC diodes from Taiwan. This milestone was achieved through a strategic collaboration with a contract fab at Pro Asia Semiconductor Corporation (PASC), Taiwan and by leveraging technology IP that RIR Power had acquired from Sicamore Semi, USA. The product portfolio includes 1200V Schottky Barrier Diodes (SBDs) ranging from 2 amps to 60 amps, addressing the most common ratings used across multiple applications and markets globally. Besides serving existing domestic Indian and the USA customers, shipping from Taiwan also provides improved access to strategic high-growth markets for SiC devices in the South East Asian region. RIR Power's SiC technology and portfolio are the result of a comprehensive technology transfer agreement signed with Sicamore Semi on October 17, 2024. The agreement granted RIR Power exclusive rights to manufacture, market and commercialize SiC diodes, Metal Oxide Silicon Field Effect Transistors (MOSFETs) and Insulated Gated Bipolar Transistors (IGBTs) using Sicamore's proven IP and process knowhow. Originally developed for 4-inch wafers, the technology has been successfully adapted for 6-inch wafer production. The scale-up was achieved with technical support from Vortex Semi, USA and PASC. The 1200V SiC diodes, produced at PASC's state-of-the-art fabrication facility in Taiwan, have been shipped to India and validated to meet global industry standards. RIR Power has already secured purchase orders from Richardson Electronics (USA) and Ankit Plastics (India), both key suppliers to the commercial, industrial and defence sectors. This achievement marks a significant leap for RIR's power electronics manufacturing capabilities and helps to expedite the ramp up and shipment of SiC devices on 6-Inch wafers from RIR's proposed Odisha Fab, said Dr. Harshad Mehta, Chairman & Director, RIR Power Electronics Ltd. By successfully scaling up world-class SiC technology, RIR Power is positioned to serve global high-growth markets including automotive, industrial, renewable energy, and defence, while strengthening the domestic semiconductor ecosystem. This achievement aligns with India's Make in India initiative, reinforcing the nation's semiconductor supply chain and reducing reliance on imports for critical defence technologies. RIR Power's new SiC semiconductor facility in Odisha, with a strategic investment of ₹618 crore, is set to further enhance India's indigenous manufacturing capabilities, generate employment, and support the country's ambition to emerge as a global leader in advanced commercial, industrial and defence electronics.

RIR Power Electronics expands SiC diode production in partnership with Taiwan's Pro Asia Semiconductor
RIR Power Electronics expands SiC diode production in partnership with Taiwan's Pro Asia Semiconductor

Business Upturn

time3 days ago

  • Automotive
  • Business Upturn

RIR Power Electronics expands SiC diode production in partnership with Taiwan's Pro Asia Semiconductor

RIR Power Electronics Limited has announced a significant manufacturing milestone with the expansion of its 1200V Silicon Carbide (SiC) diode production in collaboration with Pro Asia Semiconductor Corporation (PASC), Taiwan. This move supports RIR's aggressive go-to-market strategy for high-efficiency power solutions and aligns with India's 'Make in India' semiconductor ambitions. The new product line includes 1200V Schottky Barrier Diodes (SBDs) ranging from 2 amps to 60 amps. These diodes have been manufactured at PASC's facility and successfully shipped to India. RIR has already secured purchase orders from Richardson Electronics (USA) and Ankit Plastics (India), underlining global demand for SiC devices in commercial, industrial, and defence applications. This manufacturing initiative leverages the SiC technology acquired by RIR Power from Sicamore Semi (USA) in October 2024. Originally designed for 4-inch wafers, the technology has been scaled to 6-inch wafers with support from Vortex Semi (USA) and PASC, Taiwan. Dr. Harshad Mehta, Chairman & Director of RIR Power, said, 'This achievement strengthens RIR's capability to serve global high-growth sectors including automotive, industrial, renewable energy, and defence.' The company also plans to commence production from its upcoming ₹618 crore SiC semiconductor facility in Odisha. The strategic expansion is expected to generate employment and enhance India's self-reliance in critical electronics manufacturing.

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