Latest news with #SiCPowerDevices
National Post
20-05-2025
- Automotive
- National Post
Toshiba Releases 650V 3rd Generation SiC MOSFETs in DFN8x8 Package
Article content KAWASAKI, Japan — Toshiba Electronic Devices & Storage Corporation ('Toshiba') has launched four 650V silicon carbide (SiC) MOSFETs, equipped with its latest [1] 3rd generation SiC MOSFET chips and housed in a compact DFN8x8 package, suitable for industrial equipment, such as switched-mode power supplies and power conditioners for photovoltaic generators. Volume shipments of the four devices, ' TW031V65C,' ' TW054V65C,' ' TW092V65C,' and ' TW123V65C,' start today. Article content The new products are the first 3rd generation SiC MOSFETs to use the small surface-mount DFN8x8 package, which reduces volume by more than 90% compared to lead-inserted packages, such as TO-247 and TO-247-4L(X) and improves equipment power density. Surface mounting also allows use of parasitic impedance [2] components smaller than those of lead-inserted packages, reducing switching losses. DFN8x8 is a 4-pin [3] package, allowing use of a Kelvin connection of its signal source terminal for the gate drive. This reduces the influence of inductance in the source wire within the package, achieving high-speed switching performance; in the case of TW054V65C, it reduces turn-on loss by approximately 55% and turn-off loss by approximately 25% [4] compared to current Toshiba products [5], helping to reduce power loss in equipment. Article content Toshiba will continue to expand its lineup to contribute to improved equipment efficiency and increased power capacity. Article content Notes: [1] As of May 2025. [2] Resistance, inductance, etc. [3] A product with a signal-source pin connected close to the FET chip. [4] As of May 2025, values measured by Toshiba. For details, see Figure 1 in the version of this release on the Toshiba website. [5] A 650V 3rd generation SiC MOSFET with equivalent voltage and On-resistance that uses the TO-247 package without Kelvin connection. Article content Applications Article content Features Article content Main Specifications Article content (Unless otherwise specified, T a =25℃) Part number TW031V65C TW054V65C TW092V65C TW123V65C Package Name DFN8x8 Size (mm) Typ. 8.0×8.0×0.85 Absolute maximum ratings Drain-source voltage V DSS (V) 650 Gate-source voltage V GSS (V) -10 to 25 Drain current (DC) I D (A) T c =25°C 53 36 27 18 Electrical characteristics Drain-Source On-resistance R DS(ON) (mΩ) V GS =18V Typ. 31 54 92 123 Gate threshold voltage V th (V) V DS =10V 3.0 to 5.0 Total gate charge Q g (nC) V GS =18V Typ. 65 41 28 21 Gate-drain charge Q gd (nC) V GS =18V Typ. 10 6.2 3.9 2.3 Input capacitance C iss (pF) V DS =400V Typ. 2288 1362 873 600 Diode forward voltage V DSF (V) V GS =-5V Typ. -1.35 Sample Check & Availability Buy Online Buy Online Buy Online Buy Online Article content Follow the link below for more on Toshiba's SiC Power Devices. SiC Power Devices Article content To check availability of the new products at online distributors, visit: TW031V65C Buy Online Article content TW054V65C Buy Online Article content TW092V65C Buy Online Article content TW123V65C Buy Online Article content * Company names, product names, and service names may be trademarks of their respective companies. * Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice. Article content About Toshiba Electronic Devices & Storage Corporation Toshiba Electronic Devices & Storage Corporation, a leading supplier of advanced semiconductor and storage solutions, draws on over half a century of experience and innovation to offer customers and business partners outstanding discrete semiconductors, system LSIs and HDD products. Article content Its 19,400 employees around the world share a determination to maximize product value, and to promote close collaboration with customers in the co-creation of value and new markets. The company looks forward to building and to contributing to a better future for people everywhere. Article content Article content Article content Article content Article content Contacts Article content Customer Inquiries Power & Small Signal Device Sales & Marketing Dept. Tel: +81-44-548-2216 Contact Us Article content Article content Article content
Business Wire
20-05-2025
- Automotive
- Business Wire
Toshiba Releases 650V 3rd Generation SiC MOSFETs in DFN8x8 Package
KAWASAKI, Japan--(BUSINESS WIRE)-- Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched four 650V silicon carbide (SiC) MOSFETs, equipped with its latest [1] 3rd generation SiC MOSFET chips and housed in a compact DFN8x8 package, suitable for industrial equipment, such as switched-mode power supplies and power conditioners for photovoltaic generators. Volume shipments of the four devices, ' TW031V65C,' ' TW054V65C,' ' TW092V65C,' and ' TW123V65C,' start today. The new products are the first 3rd generation SiC MOSFETs to use the small surface-mount DFN8x8 package, which reduces volume by more than 90% compared to lead-inserted packages, such as TO-247 and TO-247-4L(X) and improves equipment power density. Surface mounting also allows use of parasitic impedance [2] components smaller than those of lead-inserted packages, reducing switching losses. DFN8x8 is a 4-pin [3] package, allowing use of a Kelvin connection of its signal source terminal for the gate drive. This reduces the influence of inductance in the source wire within the package, achieving high-speed switching performance; in the case of TW054V65C, it reduces turn-on loss by approximately 55% and turn-off loss by approximately 25% [4] compared to current Toshiba products [5], helping to reduce power loss in equipment. Toshiba will continue to expand its lineup to contribute to improved equipment efficiency and increased power capacity. Notes: [1] As of May 2025. [2] Resistance, inductance, etc. [3] A product with a signal-source pin connected close to the FET chip. [4] As of May 2025, values measured by Toshiba. For details, see Figure 1 in the version of this release on the Toshiba website. [5] A 650V 3rd generation SiC MOSFET with equivalent voltage and On-resistance that uses the TO-247 package without Kelvin connection. Applications Switched mode power supplies in servers, data centers, communications equipment, etc. EV charging stations Photovoltaic inverters Uninterruptible power supplies Features DFN8x8 surface-mount package. Enables equipment miniaturization of and automated assembly. Low switching loss. Toshiba's 3rd generation SiC MOSFETs Good temperature dependence of drain-source On-resistance by optimization of drift resistance and channel resistance ratio Low drain-source On-resistance x gate-drain charges Low diode forward voltage: V DSF =-1.35V(typ.) (V GS =-5V) Main Specifications Related links Features of third generation SiC MOSFET FAQ SiC MOSFET Comparison of SiC MOSFET and Si IGBT SiC MOSFET Absolute Maximum Ratings and Electrical Characteristics Follow the links below for more on the new products. TW031V65C TW054V65C TW092V65C TW123V65C Follow the link below for more on Toshiba's SiC Power Devices. SiC Power Devices To check availability of the new products at online distributors, visit: TW031V65C Buy Online TW054V65C Buy Online TW092V65C Buy Online TW123V65C Buy Online * Company names, product names, and service names may be trademarks of their respective companies. * Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice. About Toshiba Electronic Devices & Storage Corporation Toshiba Electronic Devices & Storage Corporation, a leading supplier of advanced semiconductor and storage solutions, draws on over half a century of experience and innovation to offer customers and business partners outstanding discrete semiconductors, system LSIs and HDD products. Its 19,400 employees around the world share a determination to maximize product value, and to promote close collaboration with customers in the co-creation of value and new markets. The company looks forward to building and to contributing to a better future for people everywhere. Find out more at
