BitGo Announces Confidential Submission of Draft Registration Statement to SEC for Proposed Initial Public Offering
This press release does not constitute an offer to sell or the solicitation of an offer to buy any securities. Any offers, solicitations or offers to buy, or any sales of securities will be made in accordance with the registration requirements of the Securities Act of 1933, as amended (the 'Securities Act'). This announcement is being issued in accordance with Rule 135 under the Securities Act.
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XRP Gets Its Own Treasury Company: Look Who's Building A $20 Million XRP Reserve
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Kioxia Commences Sample Shipments of 9th Generation BiCS FLASHTM 512Gb TLC Devices
Combine Existing Memory Cell and Advanced CMOS Technologies to Maximize Investment Efficiency TOKYO, July 25, 2025--(BUSINESS WIRE)--Kioxia Corporation, a world leader in memory solutions, today announced it has commenced sample shipments¹ of 512Gb Triple-Level Cell (TLC) memory devices incorporating its 9th generation BiCS FLASHTM 3D flash memory technology. It plans to commence mass production in fiscal year 2025. The devices are designed to support applications requiring high performance and exceptional power efficiency in the low- to mid-level storage capacities. They will also be integrated into Kioxia's enterprise SSDs, in particular those that aim to maximize GPU efficiency in AI systems. Kioxia continues to pursue a dual-axis strategy to address the diverse needs of cutting-edge applications while delivering competitive products providing optimal investment efficiency. The two axes are: 9th generation BiCS FLASH™ products: these achieve high performance at reduced production cost by leveraging CBA (CMOS directly Bonded to Array) technology,² which integrates existing memory cell technologies³ with the latest CMOS technology. 10th generation BiCS FLASH™ products: these incorporate an expansion in the number of memory layers to meet the expected future demand for larger-capacity, high-performance solutions. The new 9th generation BiCS FLASHTM 512Gb TLC, developed using a 120-layer stacking process based on 5th generation BiCS FLASH™ technology and advanced CMOS technology, exhibit significant performance improvements over Kioxia's existing BiCS FLASHTM products⁴ with the same 512Gb capacity. These include: Write performance: 61% improvement Read performance: 12% improvement Power efficiency: enhanced by 36% during write operations and 27% during read operations Data transfer speed: the Toggle DDR6.0 interface enables high-speed 3.6Gb/s⁵ NAND interface performance Bit density: increased by 8% through advancements in planar scaling Additionally, Kioxia has confirmed that the 512Gb TLC operates at NAND interface speeds of up to 4.8Gb/s⁵ under demonstration conditions. The product lineup will be determined in accordance with market demands. Kioxia is committed to strengthening its global partnerships and pursuing further innovation in order to continue delivering optimal solutions that meet the diverse needs of its customers. These samples are for the functional check purpose and the specifications of the samples may differ in mass production. Technology wherein each CMOS wafer and cell array wafer are manufactured separately in their optimized condition and then bonded together. A 112-layer 5th generation BiCS FLASHTM and a 218-layer 8th generation BiCS FLASHTM technologies. The new lineup of 9th generation BiCS FLASHTM products will incorporate one of these, depending on the model. 6th generation BiCS FLASH™, which is deploying the same 512Gb TLC product as this product. 1Gbps is calculated as 1,000,000,000bits/second. This value is obtained under specific our test environment, and may vary depending on use conditions. Notes: In every mention of a Kioxia product: Product density is identified based on the density of memory chip(s) within the Product, not the amount of memory capacity available for data storage by the end user. Consumer-usable capacity will be less due to overhead data areas, formatting, bad blocks, and other constraints, and may also vary based on the host device and application. For details, please refer to applicable product specifications. The definition of 1Gb = 2^30 bits = 1,073,741,824 bits. Read and write speeds are the best values obtained in a specific test environment at Kioxia and Kioxia warrants neither read nor write speeds in individual devices. Read and write speed may vary depending on device used and file size read or written. Company names, product names and service names may be trademarks of third-party companies. This announcement has been prepared to provide information on our business and does not constitute or form part of an offer or invitation to sell or a solicitation of an offer to buy or subscribe for or otherwise acquire any securities in any jurisdiction or an inducement to engage in investment activity nor shall it form the basis of or be relied on in connection with any contract thereof. Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice. About Kioxia Kioxia is a world leader in memory solutions, dedicated to the development, production and sale of flash memory and solid-state drives (SSDs). In April 2017, its predecessor Toshiba Memory was spun off from Toshiba Corporation, the company that invented NAND flash memory in 1987. Kioxia is committed to uplifting the world with "memory" by offering products, services and systems that create choice for customers and memory-based value for society. Kioxia's innovative 3D flash memory technology, BiCS FLASH™, is shaping the future of storage in high-density applications, including advanced smartphones, PCs, automotive systems, data centers and generative AI systems. View source version on Contacts Kota YamajiPublic RelationsKioxia Corporation+81-3-6478-2319kioxia-hd-pr@ Error in retrieving data Sign in to access your portfolio Error in retrieving data Error in retrieving data Error in retrieving data Error in retrieving data
Business Wire
an hour ago
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Kioxia Commences Sample Shipments of 9th Generation BiCS FLASH™ 512Gb TLC Devices
SAN JOSE, Calif.--(BUSINESS WIRE)-- KIOXIA America, Inc. today announced it has commenced sample shipments 1 of 512Gb Triple-Level Cell (TLC) memory devices incorporating its 9th generation BiCS FLASH™ 3D flash memory technology. It plans to commence mass production in fiscal year 2025. The devices are designed to support applications requiring high performance and exceptional power efficiency in the low- to mid-level storage capacities. They will also be integrated into Kioxia's enterprise SSDs, in particular those that aim to maximize GPU efficiency in AI systems. Kioxia continues to pursue a dual-axis strategy to address the diverse needs of cutting-edge applications while delivering competitive products providing optimal investment efficiency. The two axes are: 9th generation BiCS FLASH™ products: these achieve high performance at reduced production cost by leveraging CBA (CMOS directly Bonded to Array) technology, 2 which integrates existing memory cell technologies 3 with the latest CMOS technology. 10th generation BiCS FLASH™ products: these incorporate an expansion in the number of memory layers to meet the expected future demand for larger-capacity, high-performance solutions. The new 9th generation BiCS FLASH™ 512Gb TLC, developed using a 120-layer stacking process based on 5th generation BiCS FLASH™ technology and advanced CMOS technology, exhibits significant performance improvements over Kioxia's existing BiCS FLASH™ products 4 with the same 512Gb capacity. These include: Write performance: 61% improvement Read performance: 12% improvement Power efficiency: enhanced by 36% during write operations and 27% during read operations Data transfer speed: the Toggle DDR6.0 interface enables high-speed 3.6Gb/s 5 NAND interface performance Bit density: increased by 8% through advancements in planar scaling Additionally, Kioxia has confirmed that the 512Gb TLC operates at NAND interface speeds of up to 4.8Gb/s 5 under demonstration conditions. The product lineup will be determined in accordance with market demands. Kioxia is committed to strengthening its global partnerships and pursuing further innovation in order to continue delivering optimal solutions that meet the diverse needs of its customers. For more information, please visit and follow the company on X, formerly known as Twitter and LinkedIn ®. About KIOXIA America, Inc. KIOXIA America, Inc. is the U.S.-based subsidiary of KIOXIA Corporation, a leading worldwide supplier of flash memory and solid-state drives (SSDs). From the invention of flash memory to today's breakthrough BiCS FLASH™ 3D technology, KIOXIA continues to pioneer innovative memory, SSD and software solutions that enrich people's lives and expand society's horizons. The company's innovative 3D flash memory technology, BiCS FLASH, is shaping the future of storage in high-density applications, including advanced smartphones, PCs, automotive systems, data centers and generative AI systems. For more information, please visit © 2025 KIOXIA America, Inc. All rights reserved. Information in this press release, including product pricing and specifications, content of services, and contact information is current and believed to be accurate on the date of the announcement, but is subject to change without prior notice. Technical and application information contained here is subject to the most recent applicable KIOXIA product specifications. Notes: 1: These samples are for the functional check purpose and the specifications of the samples may differ in mass production. 2: Technology wherein each CMOS wafer and cell array wafer are manufactured separately in their optimized condition and then bonded together. 3: 112-layer 5th generation BiCS FLASH™ and 218-layer 8th generation BiCS FLASH™ technologies. The new lineup of 9th generation BiCS FLASH™ products will incorporate one of these, depending on the model. 4: 6th generation BiCS FLASH™, which is deploying the same 512Gb TLC product as this product. 5: 1Gbps is calculated as 1,000,000,000bits/second. This value is obtained under a specific test environment at Kioxia and may vary depending on use conditions. In every mention of a Kioxia product: Product density is identified based on the density of memory chip(s) within the Product, not the amount of memory capacity available for data storage by the end user. Consumer-usable capacity will be less due to overhead data areas, formatting, bad blocks, and other constraints, and may also vary based on the host device and application. For details, please refer to applicable product specifications. The definition of 1Gb = 2^30 bits = 1,073,741,824 bits. Read and write speeds are the best values obtained in a specific test environment at Kioxia and Kioxia warrants neither read nor write speeds in individual devices. Read and write speed may vary depending on device used and file size read or written. LinkedIn is a trademark of LinkedIn Corporation and its affiliates in the United States and/or other countries. Company names, product names and service names may be trademarks of third-party companies.
