Chinese researchers develop silicon-free transistor technology faster outpacing Intel, TSMC, and Samsung

Express Tribune

12-05-2025

Chinese researchers at Peking University have unveiled a potentially game-changing silicon-free transistor, claiming it could outperform the latest chips from Intel, TSMC, and Samsung.
The innovation, based on a two-dimensional material known as bismuth oxyselenide, marks a major shift in chip architecture.
The transistor employs a gate-all-around (GAAFET) design, with the gate fully enveloping the source—unlike traditional FinFET technology, which provides only partial gate coverage.
This full-contact structure significantly reduces energy leakage and allows greater control over current flow, resulting in improved performance.
According to the research team, the new transistor operates up to 40% faster than Intel's latest 3nm chips and consumes 10% less power.
Tests were conducted under the same conditions used for commercial-grade processors.
The findings, published in Nature Materials, suggest the transistor may represent the most efficient and powerful to date.
Lead scientist Professor Peng Hailin described the innovation as 'changing lanes' rather than simply improving existing materials.
The new design avoids the vertical stack typical of FinFETs and instead resembles an interwoven bridge-like structure, helping overcome miniaturisation challenges as chip sizes approach sub-3nm levels.
Two novel bismuth-based compounds power the breakthrough: Bi₂O₂Se as the semiconductor and Bi₂SeO₅ as the gate dielectric.
Both materials feature low interface energy, reducing electron scattering and enabling near-resistance-free electron flow.
'This allows electrons to flow with almost no resistance, like water through a smooth pipe,' Peng explained.
Importantly, the researchers say their transistor can be fabricated using existing semiconductor infrastructure, potentially easing the path to large-scale production. They have already used the design to create small logic units.
If commercialised, the development could significantly disrupt the global chip market and accelerate the shift away from silicon-based technology.