Latest news with #BiCSFLASHTM
Business Upturn
2 days ago
- Business
- Business Upturn
Scale AI Without Limits: KIOXIA Showcases Breakthrough Flash Storage Solutions at FMS 2025
By Business Wire India Published on August 5, 2025, 14:54 IST Business Wire India Kioxia group, a world leader in memory solutions,will once again take center stage at FMS: the Future of Memory and Storage to spotlight how its flash memory and SSD innovations are driving scalable, efficient infrastructure for artificial intelligence (AI). With a focus on real-world applications and performance gains, Kioxia will demonstrate how its latest solutions meet the evolving demands of AI across data center and enterprise environments. This press release features multimedia. View the full release here: Scale AI Without Limits: KIOXIA Showcases Breakthrough Flash Storage Solutions at FMS 2025 Kioxia will spotlight its newest products, including the high-capacity KIOXIA LC9 Series – the industry's first1 245.76 terabyte (TB)2 NVMe™ SSD. Additional highlights include the KIOXIA CM9 Series and KIOXIA CD9P Series SSDs built with the company's BiCS FLASHTM generation 8 3D flash memory, delivering performance, power efficiency, and versatility. Kioxia will also display 1 terabit (Tb)3 3bit/cell (TLC) products with BiCS FLASHTM generation 9 and generation 10 3D flash memory technology. BiCS FLASHTM generation 9 and generation 10 3D flash memory incorporate interface standards, Toggle DD6.0, and leverage the SCA (Separate Command Address) protocol and a novel command address input method of its interface, and PI-LTT (Power Isolated Low-Tapped Termination) technology, which provide improvements in data input and output speed and power consumption reduction. At FMS 2025, Kioxia will give a keynote presentation and technical sessions covering a range of topics: FMS 2025 Keynote Presentation: 'Optimize AI Infrastructure Investments with Flash Memory Technology and Storage Solutions' Tuesday, August 5 at 11:00 am PDT Venue: Mission City Ballroom, Santa Clara Convention Center, First Floor Speakers: Katsuki Matsudera, General Manager of the Memory Technical Marketing Managing Department for Kioxia Corporation and Neville Ichhaporia, Senior Vice President and General Manager of the SSD Business Unit for KIOXIA America, Inc. Executive AI Premier Level Panel: 'Memory and Storage Scaling for AI Inferencing' Thursday, August 7 at 11:00 am PDT Venue: Mission City Ballroom, Santa Clara Convention Center, First Floor Speaker: Rory Bolt, Senior Fellow and Principal Architect of the SSD Business Unit for KIOXIA America Inc. KIOXIA Booth Demos Product and technology demonstrations will be given in the iconic 2-level KIOXIA booth #307 – featuring ten separate exhibit locations – on the show floor, including: Expanding Use Cases – High-Capacity Package/Low Latency Flash memory: 32-die stack in a small BGA package of BiCS FLASH TM generation 8 QLC 3D flash memory /XL-FLASH with a CXL™ interface 32-die stack in a small BGA package of BiCS FLASH generation 8 QLC 3D flash memory /XL-FLASH with a CXL™ interface KIOXIA BiCS FLASH TM generation 9 3D Flash Memory: 1 Tb 3 wafer and a small BGA package with 512Gb chip 1 Tb wafer and a small BGA package with 512Gb chip KIOXIA BiCS FLASH TM generation 10 3D Flash Memory: 1 Tb 3 wafer and model display 1 Tb wafer and model display KIOXIA UFS – Consumer and Automotive: High performance solutions for evolving markets High performance solutions for evolving markets High Capacity 245.76 TB 2 SSD in a Dell PowerEdge™ 7715: Featuring KIOXIA LC9 Series Enterprise NVMe SSDs Featuring KIOXIA LC9 Series Enterprise NVMe SSDs Performance and Power Demo: Featuring KIOXIA CD9P Series Data Center NVMe SSDs Featuring KIOXIA CD9P Series Data Center NVMe SSDs ML Perf Storage Training: Featuring KIOXIA CM9 Series Enterprise NVMe SSDs Featuring KIOXIA CM9 Series Enterprise NVMe SSDs GPU Direct SSD Emulation: Investigating GPU direct storage devices at 143 million IOPS Investigating GPU direct storage devices at 143 million IOPS KIOXIA AiSAQ™ Software: Enabling flexible balancing of capacity and performance Enabling flexible balancing of capacity and performance RAID Offload and Data Scrubbing: Featuring KIOXIA CM7 Series Enterprise NVMe SSDs Related Link: FMS 2025 Official Site Notes: 1: As of August 5, 2025. Based on Kioxia Corporation survey. 2: Definition of SSD capacity: Kioxia Corporation defines a kilobyte (KB) as 1,000 bytes, a megabyte (MB) as 1,000,000 bytes, a gigabyte (GB) as 1,000,000,000 bytes, a terabyte (TB) as 1,000,000,000,000 bytes, and a kibibyte (KiB) is 1,024 bytes. A computer operating system, however, reports storage capacity using powers of 2 for the definition of 1GB = 2^30 bytes = 1,073,741,824 bytes and 1TB = 2^40 bytes = 1,099,511,627,776 bytes and therefore shows less storage capacity. Available storage capacity (including examples of various media files) will vary based on file size, formatting, settings, software and operating system, and/or pre-installed software applications, or media content. Actual formatted capacity may vary. 3: The flash memory capacity is calculated as 1 terabit (1 Tb) = 1,099,511,627,776 (2^40) bits, and 1 terabyte (1 TB) = 1,099,511,627,776 (2^40) bytes. Universal Flash Storage (UFS) is a product category for a class of embedded memory products built to the JEDEC UFS standard specification. NVMe is a registered or unregistered mark of NVM Express, Inc. in the United States and other countries. CXL is a trademark of Compute Express Link Consortium, Inc. Dell, PowerEdge and other trademarks are trademarks of Dell Inc. or its subsidiaries. Other company names, product names and service names may be trademarks of third-party companies. About Kioxia Kioxia is a world leader in memory solutions, dedicated to the development, production and sale of flash memory and solid-state drives (SSDs). In April 2017, its predecessor Toshiba Memory was spun off from Toshiba Corporation, the company that invented NAND flash memory in 1987. Kioxia is committed to uplifting the world with 'memory' by offering products, services and systems that create choice for customers and memory-based value for society. Kioxia's innovative 3D flash memory technology, BiCS FLASH™, is shaping the future of storage in high-density applications, including advanced smartphones, PCs, automotive systems, data centers and generative AI systems. *Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice. View source version on Disclaimer: The above press release comes to you under an arrangement with Business Wire India. Business Upturn take no editorial responsibility for the same. Ahmedabad Plane Crash Business Wire India, established in 2002, India's premier media distribution company ensures guaranteed media coverage through its network of 30+ cities and top news agencies.
Yahoo
25-07-2025
- Business
- Yahoo
Kioxia Commences Sample Shipments of 9th Generation BiCS FLASHTM 512Gb TLC Devices
Combine Existing Memory Cell and Advanced CMOS Technologies to Maximize Investment Efficiency TOKYO, July 25, 2025--(BUSINESS WIRE)--Kioxia Corporation, a world leader in memory solutions, today announced it has commenced sample shipments¹ of 512Gb Triple-Level Cell (TLC) memory devices incorporating its 9th generation BiCS FLASHTM 3D flash memory technology. It plans to commence mass production in fiscal year 2025. The devices are designed to support applications requiring high performance and exceptional power efficiency in the low- to mid-level storage capacities. They will also be integrated into Kioxia's enterprise SSDs, in particular those that aim to maximize GPU efficiency in AI systems. Kioxia continues to pursue a dual-axis strategy to address the diverse needs of cutting-edge applications while delivering competitive products providing optimal investment efficiency. The two axes are: 9th generation BiCS FLASH™ products: these achieve high performance at reduced production cost by leveraging CBA (CMOS directly Bonded to Array) technology,² which integrates existing memory cell technologies³ with the latest CMOS technology. 10th generation BiCS FLASH™ products: these incorporate an expansion in the number of memory layers to meet the expected future demand for larger-capacity, high-performance solutions. The new 9th generation BiCS FLASHTM 512Gb TLC, developed using a 120-layer stacking process based on 5th generation BiCS FLASH™ technology and advanced CMOS technology, exhibit significant performance improvements over Kioxia's existing BiCS FLASHTM products⁴ with the same 512Gb capacity. These include: Write performance: 61% improvement Read performance: 12% improvement Power efficiency: enhanced by 36% during write operations and 27% during read operations Data transfer speed: the Toggle DDR6.0 interface enables high-speed 3.6Gb/s⁵ NAND interface performance Bit density: increased by 8% through advancements in planar scaling Additionally, Kioxia has confirmed that the 512Gb TLC operates at NAND interface speeds of up to 4.8Gb/s⁵ under demonstration conditions. The product lineup will be determined in accordance with market demands. Kioxia is committed to strengthening its global partnerships and pursuing further innovation in order to continue delivering optimal solutions that meet the diverse needs of its customers. These samples are for the functional check purpose and the specifications of the samples may differ in mass production. Technology wherein each CMOS wafer and cell array wafer are manufactured separately in their optimized condition and then bonded together. A 112-layer 5th generation BiCS FLASHTM and a 218-layer 8th generation BiCS FLASHTM technologies. The new lineup of 9th generation BiCS FLASHTM products will incorporate one of these, depending on the model. 6th generation BiCS FLASH™, which is deploying the same 512Gb TLC product as this product. 1Gbps is calculated as 1,000,000,000bits/second. This value is obtained under specific our test environment, and may vary depending on use conditions. Notes: In every mention of a Kioxia product: Product density is identified based on the density of memory chip(s) within the Product, not the amount of memory capacity available for data storage by the end user. Consumer-usable capacity will be less due to overhead data areas, formatting, bad blocks, and other constraints, and may also vary based on the host device and application. For details, please refer to applicable product specifications. The definition of 1Gb = 2^30 bits = 1,073,741,824 bits. Read and write speeds are the best values obtained in a specific test environment at Kioxia and Kioxia warrants neither read nor write speeds in individual devices. Read and write speed may vary depending on device used and file size read or written. Company names, product names and service names may be trademarks of third-party companies. This announcement has been prepared to provide information on our business and does not constitute or form part of an offer or invitation to sell or a solicitation of an offer to buy or subscribe for or otherwise acquire any securities in any jurisdiction or an inducement to engage in investment activity nor shall it form the basis of or be relied on in connection with any contract thereof. Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice. About Kioxia Kioxia is a world leader in memory solutions, dedicated to the development, production and sale of flash memory and solid-state drives (SSDs). In April 2017, its predecessor Toshiba Memory was spun off from Toshiba Corporation, the company that invented NAND flash memory in 1987. Kioxia is committed to uplifting the world with "memory" by offering products, services and systems that create choice for customers and memory-based value for society. Kioxia's innovative 3D flash memory technology, BiCS FLASH™, is shaping the future of storage in high-density applications, including advanced smartphones, PCs, automotive systems, data centers and generative AI systems. View source version on Contacts Kota YamajiPublic RelationsKioxia Corporation+81-3-6478-2319kioxia-hd-pr@ Error in retrieving data Sign in to access your portfolio Error in retrieving data Error in retrieving data Error in retrieving data Error in retrieving data
Business Wire
25-07-2025
- Business
- Business Wire
Kioxia Commences Sample Shipments of 9th Generation BiCS FLASH TM 512Gb TLC Devices
TOKYO--(BUSINESS WIRE)-- Kioxia Corporation, a world leader in memory solutions, today announced it has commenced sample shipments¹ of 512Gb Triple-Level Cell (TLC) memory devices incorporating its 9th generation BiCS FLASH TM 3D flash memory technology. It plans to commence mass production in fiscal year 2025. The devices are designed to support applications requiring high performance and exceptional power efficiency in the low- to mid-level storage capacities. They will also be integrated into Kioxia's enterprise SSDs, in particular those that aim to maximize GPU efficiency in AI systems. Kioxia continues to pursue a dual-axis strategy to address the diverse needs of cutting-edge applications while delivering competitive products providing optimal investment efficiency. The two axes are: 9th generation BiCS FLASH™ products: these achieve high performance at reduced production cost by leveraging CBA (CMOS directly Bonded to Array) technology,² which integrates existing memory cell technologies³ with the latest CMOS technology. 10th generation BiCS FLASH™ products: these incorporate an expansion in the number of memory layers to meet the expected future demand for larger-capacity, high-performance solutions. The new 9th generation BiCS FLASH TM 512Gb TLC, developed using a 120-layer stacking process based on 5th generation BiCS FLASH™ technology and advanced CMOS technology, exhibit significant performance improvements over Kioxia's existing BiCS FLASH TM products⁴ with the same 512Gb capacity. These include: Additionally, Kioxia has confirmed that the 512Gb TLC operates at NAND interface speeds of up to 4.8Gb/s⁵ under demonstration conditions. The product lineup will be determined in accordance with market demands. Kioxia is committed to strengthening its global partnerships and pursuing further innovation in order to continue delivering optimal solutions that meet the diverse needs of its customers. These samples are for the functional check purpose and the specifications of the samples may differ in mass production. Technology wherein each CMOS wafer and cell array wafer are manufactured separately in their optimized condition and then bonded together. A 112-layer 5th generation BiCS FLASH TM and a 218-layer 8th generation BiCS FLASH TM technologies. The new lineup of 9th generation BiCS FLASH TM products will incorporate one of these, depending on the model. 6th generation BiCS FLASH™, which is deploying the same 512Gb TLC product as this product. 1Gbps is calculated as 1,000,000,000bits/second. This value is obtained under specific our test environment, and may vary depending on use conditions. Notes: In every mention of a Kioxia product: Product density is identified based on the density of memory chip(s) within the Product, not the amount of memory capacity available for data storage by the end user. Consumer-usable capacity will be less due to overhead data areas, formatting, bad blocks, and other constraints, and may also vary based on the host device and application. For details, please refer to applicable product specifications. The definition of 1Gb = 2^30 bits = 1,073,741,824 bits. Read and write speeds are the best values obtained in a specific test environment at Kioxia and Kioxia warrants neither read nor write speeds in individual devices. Read and write speed may vary depending on device used and file size read or written. Company names, product names and service names may be trademarks of third-party companies. This announcement has been prepared to provide information on our business and does not constitute or form part of an offer or invitation to sell or a solicitation of an offer to buy or subscribe for or otherwise acquire any securities in any jurisdiction or an inducement to engage in investment activity nor shall it form the basis of or be relied on in connection with any contract thereof. Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice. About Kioxia Kioxia is a world leader in memory solutions, dedicated to the development, production and sale of flash memory and solid-state drives (SSDs). In April 2017, its predecessor Toshiba Memory was spun off from Toshiba Corporation, the company that invented NAND flash memory in 1987. Kioxia is committed to uplifting the world with 'memory' by offering products, services and systems that create choice for customers and memory-based value for society. Kioxia's innovative 3D flash memory technology, BiCS FLASH™, is shaping the future of storage in high-density applications, including advanced smartphones, PCs, automotive systems, data centers and generative AI systems.
