26-03-2025
Scientists Built a Memory Device That Doesn't Lose Power—and the Implications Are Mind-Blowing
MRAM is one of the most promising emerging memory technologies we have, as it can theoretical improve on nearly every metric of existing DRAM and SRAM technologies.
However, MRAM requires significant current to switch the magnetic vectors required to write information.
A new study by scientists at Osaka University created a new material that can help lower that current threshold while maintaining all of MRAM's inherent efficiencies.
The story of computing is one of progressively better, faster, and more efficient machines powered by incremental-yet-substantial improvements made to every piece of tech they contain. The oft-mentioned fact that the computer that flew the Apollo 11 mission was less powerful than the phone in your pocket just goes to show the immense progress made in only half a century. However, this story of progress has yet to end, and one area in which computers could still make huge gains is by replacing volatile dynamic random-access memory (DRAM) with what is known as magnetoresistive RAM (MRAM).
MRAM uses an electron's spin to store information instead of the tiny electrical chargers on the capacitors inside DRAM. This makes it non-volatile, meaning it can store information without a power supply. Theoretically, MRAM devices could make computers more powerful and more efficient by lowering power needs in a standby state.
Although the idea for MRAM dates back to the late 1980s, engineers still can't get the tech into high enough densities to be truly functional, due to the amount of current needed to change magnetization vectors and write information. Now, scientists in Japan may have a solution called a 'multiferroic heterostructure.' Let's break it down.
In a new paper published in Advanced Science, scientists at Osaka University essentially developed an improved method for controlling the electric fields in MRAM devices. The new component in question— the multiferroic heterostructure—consists of two layers of ferromagnetic and piezoelectric material with a super-thin strip of the element vanadium sandwiched between—something previous MRAM devices lacked.
When passing a current through these materials, Live Science reports that the magnetic state switched direction, materials maintained shape, and the magnetic state remained after the power supply was cut off. This breakthrough could help lower the power needed to write information while finally opening the doors for higher MRAM densities.
'Through precise control of the multiferroic heterostructures, two key requirements for implementing practical magnetoelectric (ME)-MRAM devices are satisfied, namely a non-volatile binary state with zero electric field, and a giant converse magnetoelectric effect,' Kohei Hamaya from Osaka University said in a press statement.
As Live Science notes, it's uncertain exactly how well this new technology will hold up under consistent use, but the researchers remain confident that their technology can be implemented on 'practical MRAM devices.' Like most emerging technologies, it's unlikely that MRAM will be seen on laptop spec sheets anytime soon, as the technology will find its way into more niche applications first. But... maybe someday?
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