Latest news with #UFS4.1
Hindustan Times
5 days ago
- Hindustan Times
iQOO Neo 10 launched in India with Snapdragon 8s Gen 4 and 7000mAh battery
iQOO has launched the Neo 10 smartphone in India, featuring the Snapdragon 8s Gen 4 chipset and a 7000mAh battery. The phone will be available in four storage variants, starting at ₹31,999 ( ₹29,999 with offers) for the 8+128GB model. Other variants include 8+256GB at ₹33,999, 12+256GB at ₹35,999, and 16+512GB at ₹40,999, with pre-bookings open now. Sales begin on 3 June via Amazon and iQOO's online store. The iQOO Neo 10 will be manufactured in vivo's Greater Noida facility under the 'Make in India' initiative. iQOO Neo 10 uses Qualcomm's Snapdragon 8s Gen 4 processor, manufactured on a 4nm process. iQOO claims a 31% CPU and 49% GPU improvement over previous generations. The phone has an AnTuTu score of 2.42 million and comes with LPDDR5X RAM and UFS 4.1 storage. The top-end model includes up to 16GB RAM with 16GB virtual RAM and can run up to 52 background apps. A secondary chip, the Q1 Supercomputing Chip, is integrated to manage frame stability and handle video enhancements like MEMC. It supports up to 144 FPS Game Frame Interpolation and includes a 3000Hz touch sampling rate. The Neo 10 includes a 7000mAh Silicon BlueVolt battery, which supports 120W FlashCharge. According to iQOO, it charges from 1% to 50% in 19 minutes and fully charges in 36 minutes. The device is 8.09mm thick and supports bypass charging to reduce heat during intensive tasks. It features a 6.78-inch 1.5K AMOLED display with a 144Hz refresh rate and peak brightness of 5500 nits. It also has an IP65 rating for water and dust resistance. The phone comes in Titanium Chrome and Inferno Red colour options, the latter exclusive to India. The rear camera system consists of a 50MP Sony primary sensor with OIS and an 8MP ultra-wide lens. The front-facing camera is 32MP and supports 4K 60FPS video on both front and rear. Features include Night Mode, Portrait Mode with adjustable focal lengths, and AI-powered photo tools. The phone runs Funtouch OS 15 based on Android 15. iQOO promises 3 years of Android updates and 4 years of security patches. AI features include object erasing, image expansion, live cutout, note assist, and document translation.
GSM Arena
22-05-2025
- Business
- GSM Arena
SK Hynix unveils 321-layer UFS 4.1 that is faster, thinner and more efficient than the previous gen
Memory maker SK hynix has announced the world's first 321-layer UFS 4.1 TLC NAND flash for smartphones. It's faster, more efficient and thinner to boot – perfect for the next generation of phones that will focus on slim builds and AI tools, says the company. Compared to the previous generation (which used a 238-layer design) from 2022, these new storage chips have 15% higher random read and 40% higher random write speeds. For sequential reads, they max out the interface at 4.3GB/s. On top of that, the NAND package is 0.85mm thick, down from 1mm. It doesn't sound like much, but every little bit helps if phones like the Galaxy S25 Edge become popular. Recent trends aside, the new 321-layer UFS 4.1 design is 7% more power efficient than the previous generation – less heat and more performance are always on trend. SK hynix says that the sequential read speed will improve on-device AI performance (since it will speed up loading the model to RAM), while the improved random performance will boost multitasking. The company will produce storage in two capacities – 512GB and 1TB. That's right, there isn't going to be a 256GB variant, so this will be something to look out for when choosing your next phone (like how 128GB models use UFS 3.1 now). That is a problem for next year, though – SK hynix says that it expects to win orders from smartphone makers this year and to start shipping in volume in the first three months of next year. It's not just smartphones, though, the company is also working on 321-layer designs for SSDs for consumers and data centers. Source
Korea Herald
22-05-2025
- Business
- Korea Herald
SK hynix Develops UFS 4.1 Solution Based on 321-High NAND
SEOUL, South Korea, May 22, 2025 /PRNewswire/ -- SK hynix Inc. (or "the company", announced today that it has developed UFS 4.1 solution product adopting the world's highest 321-layer 1Tb triple level cell 4D NAND flash for mobile applications. The development comes amid increasing requirements for high performance and low power of a NAND solution product to ensure a stable operation of on-device AI. The company expects the UFS 4.1 product, optimized for AI workload, to help enhance its memory leadership in the flagship smartphone markets. With an increase in demand for on-device AI leading to greater importance of the balance between computation capabilities and battery efficiency of a device, the mobile market is now requiring thinness and low power from a mobile device. The latest product comes with a 7% improvement in power efficiency, compared with the previous generation based on 238-high NAND and a slimmer 0.85mm thickness, down from 1mm before, to fit into a ultra-slim smartphone. The product also supports data transfer speed of 4300MB/s, the fastest sequential read* for a fourth-generation of UFS, while providing the best-in-class performance by also improving random read and write speed**, critical for multitasking, by 15% and 40%, respectively. Immediate provision of the required data for on-device AI and faster running speed and the responsivity of an application are expected to enhance user experience. SK hynix plans to win customer qualification within the year and ship in volume from the first quarter of next year. The product will be provided in two capacity types – 512GB and 1TB. Ahn Hyun, President and Chief Development Officer, said that SK hynix plans to complete development of the 321-high 4D NAND-based SSD for both consumers and data centers within the year. "We are on track to expand our position as a full-stack AI memory provider in the NAND space by building a product portfolio with AI technological edge." About SK hynix Inc. SK hynix Inc., headquartered in Korea, is the world's top tier semiconductor supplier offering Dynamic Random Access Memory chips ("DRAM") and flash memory chips ("NAND flash") for a wide range of distinguished customers globally. The Company's shares are traded on the Korea Exchange, and the Global Depository shares are listed on the Luxembourg Stock Exchange. Further information about SK hynix is available at
Korea Herald
22-05-2025
- Business
- Korea Herald
SK hynix unveils world's highest 321-layer NAND chips
South Korean chipmaker SK hynix said Thursday it had developed a universal flash storage chip integrating the world's highest 321-layer 1 terabit NAND flash technology, providing enhanced speed and power efficiency for mobile devices with on-device AI. The UFS 4.1 product was developed in response to growing demand for NAND solutions that combine high performance with low power consumption to support reliable operation of AI-powered mobile devices, the company explained. 'Through UFS 4.1, which is optimized for AI workloads, we will strengthen our leadership in the smartphone memory market," the firm said in a statement. The UFS 4.1 solution is 7 percent more power efficient than the previous model, which used 238-layer NAND, according to the company. The chip is also slimmer at 0.85 millimeters thick, down from 1 mm in the previous model, making it more suitable for ultra-slim devices. Key performance improvements include a sequential read speed of 4,300 megabytes per second, the fastest among fourth-generation UFS products. Random read and write speeds, key metrics for multitasking in mobile devices, have improved by 15 percent and 40 percent, respectively, compared to the previous generation. The company said the improved performance is expected to deliver data for on-device AI operations without delay, while allowing faster and more responsive app launches to enhance overall user experience. SK hynix said it would send sample shipments of the product, which comes in 512-gigabyte and 1-terabyte capacities, to customers within this year. Mass production is expected to begin in the first quarter of next year. Ahn Hyun, chief development officer at SK hynix, said the company planned to complete development of both consumer and data center solid-state drives based on 321-layer 4D NAND within this year. "We are on track to expand our position as a full-stack AI memory provider in the NAND space by building a product portfolio with an AI technological edge," said Ahn.
Korea Herald
22-05-2025
- Business
- Korea Herald
SK hynix develops new flash storage chip using 321-layer NAND
SK hynix Inc. said Thursday it has developed a mobile universal flash storage chip based on the world's highest 321-layer 1 terabit NAND flash technology, delivering faster, more power-efficient data processing tailored for on-device artificial intelligence. The new UFS 4.1 product offers a 7 percent improvement in power efficiency compared with the previous generation, which used 238-layer NAND, according to SK hynix. At just 0.85 millimeter thick, slimmer than the previous 1-mm model, the chip is designed to fit into ultra-slim smartphones. It supports sequential read speeds of 4,300 megabytes per second, the fastest for any fourth-generation UFS product to date. In addition, it delivers best-in-class performance with random read and write speeds improved by 15 percent and 40 percent, respectively. SK hynix said the new UFS 4.1 will meet growing market demands for high performance and low power consumption in NAND solutions, ensuring stable operation for AI-powered mobile devices. "We are on track to expand our position as a full-stack AI memory provider in the NAND space by building a product portfolio with an AI technological edge," said Ahn Hyun, chief development officer at SK hynix. (Yonhap)
