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China's YMTC moves to break free of U.S. sanctions by building production line with homegrown tools — aims to capture 15% of NAND market by late 2026
China's YMTC moves to break free of U.S. sanctions by building production line with homegrown tools — aims to capture 15% of NAND market by late 2026

Yahoo

time22-07-2025

  • Business
  • Yahoo

China's YMTC moves to break free of U.S. sanctions by building production line with homegrown tools — aims to capture 15% of NAND market by late 2026

When you buy through links on our articles, Future and its syndication partners may earn a commission. Yangtze Memory Technologies Co. (YMTC), China's leading producer of NAND memory, has been on the Entity List of the U.S. Commerce Department since late 2022, which essentially bars its access to advanced fab tools. Despite sanctions and restrictions, YMTC plans to expand its production capacity this year, aiming to capture a 15% share of NAND memory production by the end of 2026, reports DigiTimes. The company also plans to build a trial production line that exclusively uses Chinese fab tools. YMTC to expand capacity to 150,000 wafer starts per month YMTC was expected to reach a monthly capacity of 130,000 wafer starts per month (WSPM) by the end of 2024, which equates to roughly 8% of the worldwide NAND supply, according to DigiTimes. While YMTC's abilities to procure fab tools from leading producers, such as ASML, Applied Materials, KLA, and LAM Research are extremely limited, the company still plans to increase its production capacity to around 150,000 WSPM. Earlier this year, the company began mass production of its X4-9070 3D TLC NAND memory, featuring 232 active layers and a total of 294 active layers. The company's 5th Generation NAND memory bonds two structures containing 150 and 144 layers together to achieve a total of 294 layers. The increased output, combined with the increased number of layers (or gates per vertical NAND string), effectively increases NAND memory bit output for YMTC. However, it remains to be seen whether such a strategy can enable the company to double its market share and achieve 15% of the global NAND output by late 2026. Unlike other global NAND suppliers, who are cutting production and investment due to soft demand and pricing pressure, YMTC continues to expand. Bit growth across the industry is forecast to rise by about 10% to 15% in 2025, but YMTC is expected to ramp up its bit growth aggressively. In addition to its flagship 1TB 3D TLC X4-9070 device with a 3600 MT/s interface, the company intends to release its 3D QLC X4-6080 device later this year. We do not know how many active layers this device will use, though it is more than likely that it will retain the 294-layer production technology. Next year, the company will introduce its 2TB 3D TLC X5-9080 device, as well as a 3D QLC X5-6080 device with a 4800 MT/s interface. The 2TB NAND device will enable YMTC to build high-capacity SSDs with very high performance. Though it remains to be seen whether the company can produce enough of these particular chips. YMTC's next-generation node will likely use more than 300 layers and will likely require the company to bond three 3D NAND structures together. This means that wafers will spend more time in the fab, therefore reducing the number of wafer starts per month, but increasing bit output. A new hope? Under the export rules imposed in late 2022, American companies cannot ship tools that can be used to make 3D NAND memory with over 128 layers to Chinese entities. Of course, the U.S. government cannot ban the usage of string stacking (the technology used by YMTC to build its 232L 3D NAND), so YMTC can continue scaling its 3D NAND using American tools. However, the U.S. Department of Commerce put YMTC into its Entity List in December 2022, which means that American companies should get an export license from the Department of Commerce to sell tools to the Chinese company. We do not know whether or not YMTC managed to acquire any new American tools after 2022, but the NAND flash producer plans to begin trial production on a new manufacturing line built entirely with domestically developed equipment in the second half of 2025, according to DigiTimes. This marks a major step forward in China's goal to reduce reliance on foreign semiconductor production tools. However, a 100% localization of fab tools is well beyond what analysts may think is possible for Chinese chipmakers today. Looking ahead, YMTC is expected to account for approximately 30% of China's NAND consumption in 2025, but its output still falls short of national demand. The upcoming trial line is expected to help YMTC ease output constraints, even though yield levels are a major concern, due to Chinese tools being known for lower yields when compared to their American, Japanese, or European counterparts. Analysts believe YMTC's new production line, which exclusively uses Chinese fab tools, could lead to a doubling of YMTC's bit output by the end of 2026, potentially pushing its share of the global NAND market beyond 15%. However, these predictions may be too optimistic, as the new production line will be a trial intended to test the capabilities of tools made in China, not to produce 3D NAND devices in high volume. If YMTC's trial production line results end up being promising, it could scale it to build flash memory chips at volume. However, scaling up will require a lot of time, so YMTC's aspirations of capturing 15% of the NAND market by late 2026 remain optimistic. It is believed that if YMTC's production capacity exceeds 200,000 WSPM, this could also influence global pricing trends. YMTC already leads transition to domestic tools YMTC stands out as the clear leader in China's semiconductor equipment localization efforts, with an adoption rate of 45%, far exceeding both the national average and other major domestic fabs, according to estimates from Morgan Stanley. This aggressive push aligns with its strategic goal of building fully self-reliant NAND production lines amid tightening U.S. export controls. However, a 45% adoption rate is considerably lower than 100%. Among YMTC's domestic suppliers are AMEC (etching tools, chemical vapor deposition tools), Naura Technology (etching tools, CVD tools), and Piotech (atomic layer deposition tools, CVD tools). While Chinese companies are known for world-class etching and deposition tools, it is unclear whether YMTC can source lithography tools that it needs from local suppliers. For now, the best Chinese lithography tool is currently produced in high volume by Shanghai Microelectronics Equipment (SMEE). The SSX600 from SMEE can make logic chips on a 90nm process technology, though it is working on more advanced tools. Other major Chinese chipmakers are progressing with equipment localization more cautiously, and at a significantly lower pace compared to YMTC. SMIC, China's largest foundry, shows a 22% localization rate at its Jingcheng fab, and 18% at its Lingang fab. These results reflect the gradual substitution of foreign tools, likely limited by reliance on advanced lithography systems that China cannot yet produce domestically. Hua Hong (Fab 9) and CXMT, a DRAM manufacturer, both report 20% localization, signaling steady but conservative integration of domestic equipment, especially in mature-node manufacturing where localization is more feasible. YMTC's investment arm, Changjiang Capital, has quietly funded a number of local tool and material suppliers, specifically those tied to its own production network. To avoid attracting unwanted attention from U.S. authorities, these investments are often routed through non-listed or indirect entities. Suppliers have also reportedly been instructed to strip their badges from equipment. While Chinese chipmakers are making incremental progress, their localization levels remain clustered in the 15% – 27% range — well below YMTC's 45% — highlighting the complexity of replacing foreign wafer fab equipment. That said, YMTC's plan to localize 100% of their tools looks unrealistic for now, despite their lofty goals. Follow Tom's Hardware on Google News to get our up-to-date news, analysis, and reviews in your feeds. Make sure to click the Follow button. Error in retrieving data Sign in to access your portfolio Error in retrieving data Error in retrieving data Error in retrieving data Error in retrieving data

Tech war: Stanford-educated expert leads China's new semiconductor school with YMTC support
Tech war: Stanford-educated expert leads China's new semiconductor school with YMTC support

South China Morning Post

time11-07-2025

  • Science
  • South China Morning Post

Tech war: Stanford-educated expert leads China's new semiconductor school with YMTC support

Wuhan University has become the latest institution to join China's push for self-reliance in semiconductors by establishing the School of Integrated Circuits, led by a scientist educated at Stanford University. Liu Sheng, a member of the Chinese Academy of Sciences who earned a doctorate in mechanical engineering from Stanford in 1992, has been appointed as the inaugural dean of the new school. At an opening ceremony on Thursday, he said the school's establishment followed 'an in-depth exploration of the strategic needs of the country' and served as 'a powerful response to technological chokepoints', according to a statement posted on the university's WeChat account. On the same day, the school signed a strategic cooperation agreement with Wuhan-based Yangtze Memory Technologies Corporation (YMTC) , China's leading memory chip manufacturer. YMTC is known for its 3D NAND flash memory technology, which stacks transistor dies vertically to increase storage density. The company's technology has reportedly been used by South Korea's Samsung Electronics. A sign at YMTC's Silicon Valley office. Photo: Shutterstock YMTC chairman Chen Nanxiang, who attended the event, said the partnership aimed to 'explore a new model of integrating industry with education' to 'cultivate all-round talent with both theoretical foundations and engineering skills'.

BofA starts Sandisk at Buy on margin upside, NAND recovery prospects
BofA starts Sandisk at Buy on margin upside, NAND recovery prospects

Yahoo

time18-06-2025

  • Business
  • Yahoo

BofA starts Sandisk at Buy on margin upside, NAND recovery prospects

-- Sandisk Corp was initiated with a Buy rating and a price objective of $61 by BofA, which sees the flash storage maker as a key beneficiary of an early-stage recovery in NAND pricing and improving operating margins. Sandisk's shares were up 5% at $46.55. BofA's $61 price target implies more than a 30% upside. The brokerage cited several tailwinds behind its bullish view, including a more favorable supply-demand balance in the NAND market, the potential for operating leverage as pricing improves, and Sandisk's exposure to relatively resilient end markets. Sandisk, a major developer of NAND-based data storage devices, has also benefited from a joint venture with Japan's Kioxia, which helps share rising capital expenditures in an industry where annual costs have soared to as much as $30 billion. That structure, along with conservative production management, has made Sandisk's margins more stable in downturns, the brokerage said. While eSSD adoption is still growing, accounting for only 15% of revenue in the second half of 2024, the note flagged long-term margin and valuation improvement if pricing trends firm up across the industry. Still, the firm warned of several risks to its thesis, including heightened price competition from Chinese rival YMTC, the fragmented nature of the NAND market, and the sector's vulnerability to economic cycles and capex volatility. Despite these challenges, the brokerage said Sandisk's positioning and valuation leave room for upside as industry fundamentals stabilize. Related articles BofA starts Sandisk at Buy on margin upside, NAND recovery prospects Microsoft plans to cut thousands of jobs in sales division - Bloomberg Barclays and Santander are potential bidders for Banco Sabadell's TSB unit

Memory and Storage Technology Research Report 2025: High Bandwidth Memory Set to Dominate DRAM Market by 2030 Amid AI Boom and 3D NAND Advancements - Long-term Forecast to 2036
Memory and Storage Technology Research Report 2025: High Bandwidth Memory Set to Dominate DRAM Market by 2030 Amid AI Boom and 3D NAND Advancements - Long-term Forecast to 2036

Yahoo

time17-06-2025

  • Business
  • Yahoo

Memory and Storage Technology Research Report 2025: High Bandwidth Memory Set to Dominate DRAM Market by 2030 Amid AI Boom and 3D NAND Advancements - Long-term Forecast to 2036

Expansion is fueled by soaring demand for AI, high-performance computing, and advanced data infrastructure. Rebounding from the downturn in 2022-2023, the sector marked unprecedented revenues in 2025 due to AI-driven dynamics. High Bandwidth Memory (HBM) leads the market transformation, with 50% market share in DRAM expected by decade's end. Key players like Samsung and Micron are ramping up HBM3E and HBM4 production. NAND flash innovations continue, with YMTC's 294-layer production and CXMT's DDR5 modules highlighting China's growing influence. Data centers, edge computing, and automotive applications propel demand, leveraging sophisticated storage solutions. The market faces scale challenges but sees potential in 3D DRAM and advanced packaging technologies. Dublin, June 17, 2025 (GLOBE NEWSWIRE) -- The "The Global Memory and Storage Technology Market 2026-2036" report has been added to Global Memory and Storage Technology Market 2026-2036 provides insights into the rapidly evolving memory and storage landscape, delivering critical analysis for technology leaders, investors, and strategic decision-makers navigating the industry's transformation through 2036. The global memory and storage technology market is poised for significant expansion, projected to exceed $400 billion by 2036, driven by explosive demand from artificial intelligence, high-performance computing, and next-generation data infrastructure. After recovering from the severe cyclical downturn of 2022-2023, the industry achieved record revenues surpassing $200 billion in 2025, marking the beginning of a sustained growth trajectory fundamentally reshaped by AI workloads. High Bandwidth Memory (HBM) emerges as the market's most dynamic segment. HBM's share of the total DRAM market is expected to reach 50% by decade's end, as AI training and inference applications demand unprecedented memory bandwidth. Leading manufacturers including Samsung, SK hynix, and Micron are aggressively scaling HBM3E production, with next-generation HBM4 technology promising even greater performance gains. NAND flash technology continues evolving through 3D scaling innovations, with manufacturers pushing beyond 300 layers using advanced CMOS Bonded Array (CBA) architectures. YMTC's Xtacking 4.0 technology and the industry's transition to Penta-Level Cell (PLC) storage demonstrate the sector's relentless density improvements. Meanwhile, emerging memory technologies-including Magnetoresistive RAM (MRAM), Resistive RAM (ReRAM), and Ferroelectric RAM (FeRAM) - are gaining commercial traction, particularly in embedded applications and edge computing devices. Chinese memory manufacturers are fundamentally altering competitive dynamics, with YMTC achieving 294-layer 3D NAND production and CXMT successfully launching domestic DDR5 modules. China's memory market share continues expanding across consumer and enterprise segments, forcing global leaders to accelerate premium product development and advanced technology adoption. Despite ongoing U.S. export restrictions, Chinese companies demonstrate remarkable technological progress, with JHICC ramping capacity and new entrants like SwaySure Technology strengthening domestic supply chains. Data centers and cloud infrastructure represent the largest growth driver, consuming increasingly sophisticated storage solutions optimized for AI/ML workloads. The economic advantages of QLC SSDs over traditional HDDs in hyperscale environments are reshaping storage hierarchies, with 10PB QLC deployments delivering $30 million cost savings over traditional tiered storage architectures. Edge computing and automotive applications create additional demand vectors, as autonomous vehicles and IoT devices require high-performance, reliable memory solutions. The industry faces mounting scaling challenges as conventional planar technologies approach physical limits. 3D DRAM architectures, vertical transistor designs, and novel cell structures represent critical technological pathways beyond 2030. Advanced packaging innovations, including wafer-to-wafer bonding and chiplet integration, enable continued performance improvements while managing manufacturing complexity. Environmental sustainability increasingly influences technology development, with manufacturers investing in energy-efficient designs and circular economy initiatives. Geopolitical tensions continue reshaping global supply chains, driving regionalization trends and technology transfer restrictions that impact long-term market dynamics. The memory and storage technology market to 2036 represents a fundamental transformation driven by AI proliferation, technological breakthrough achievements, and evolving competitive landscapes. Success requires navigating complex scaling challenges while capitalizing on explosive demand from next-generation computing applications across all market segments. Report Highlights Market Forecasting and Technology Segmentation: Global market revenue projections spanning 2026-2036 with detailed breakdowns by technology, application, and geographic region DRAM market analysis including High Bandwidth Memory (HBM) growth trajectories, DDR evolution, and mobile memory trends NAND flash and SSD market forecasts covering enterprise, consumer, and emerging cell technologies including QLC and PLC developments Hard disk drive market evolution with energy-assisted recording technologies (HAMR/MAMR) adoption timelines Emerging memory technologies market sizing for MRAM, ReRAM, FeRAM, and PCM across embedded and standalone applications Advanced Technology Analysis and Roadmaps: Detailed DRAM technology progression from planar scaling challenges to 3D architecture development CMOS bonding and advanced integration technologies including vertical transistor implementations HBM technology evolution covering 3D stacking, thermal management, and processor integration strategies NAND flash scaling analysis beyond 300 layers with CBA and Xtacking technology implementations Comprehensive emerging memory technology comparison including performance benchmarking and commercialization timelines Supply Chain and Manufacturing Intelligence: Global manufacturing capacity analysis by technology and region with capital expenditure trends Technology node migration strategies and yield learning curve optimization Equipment supplier analysis covering critical manufacturing tools and materials Regional market dynamics including China's memory industry development and trade restriction impacts Application-Specific Market Analysis: AI and machine learning memory requirements including LLM infrastructure scaling Data center and cloud storage evolution with QLC SSD economic analysis Automotive memory systems covering ADAS levels and autonomous vehicle storage architectures Edge computing and IoT memory solutions across industrial and consumer applications Embedded memory analysis for microcontrollers, SoCs, and advanced semiconductor applications Strategic Business Intelligence: Advanced packaging and integration technologies including 3D stacking and chiplet architectures Processing-in-memory and computational storage development with commercial product analysis Sustainability and environmental impact assessment across technology lifecycles Comprehensive pricing analysis with historical trends and future projection models Technology roadmaps extending to 2036 with breakthrough technology research including quantum and neuromorphic memory Company Intelligence and Market Positioning: Detailed profiles of 154 companies across the memory and storage ecosystem Key Topics Covered: 1 EXECUTIVE SUMMARY1.1 Report Overview and Key Findings1.2 Market Size and Growth Projections 2026-20361.3 Technology Roadmap and Innovation Trends1.4 Market Dynamics and Trade Implications1.5 Investment and Market Outlook 2 INTRODUCTION2.1 Global Memory and Storage Technology Landscape2.2 Computing Architecture Evolution2.3 End-Market Analysis 3 MARKET FORECASTS (2026-2036)3.1 Market Projections3.2 DRAM Market Forecast3.3 NAND Flash and SSD Market Forecast3.4 Hard Disk Drive (HDD) Market Forecast3.5 Cloud and Data Center Storage Forecast3.6 Edge Computing Storage Forecast3.7 AI and HPC Memory/Storage Forecast3.8 Emerging Memory Technologies Forecast 4 DRAM TECHNOLOGY ANALYSIS AND ROADMAPS4.1 Conventional DRAM Scaling and Challenges4.2 3D DRAM Architecture Development4.3 CMOS Bonding and Advanced Integration4.4 High Bandwidth Memory (HBM) Technology 5 NAND FLASH TECHNOLOGY ANALYSIS AND ROADMAPS5.1 3D NAND Scaling and Layer Count Evolution5.2 CMOS Bonded Array (CBA) and Xtacking Technologies5.3 Multi-Level Cell Technology Evolution5.4 NAND Interface and Form Factor Evolution5.5 Advanced NAND Technologies 6 EMERGING MEMORY TECHNOLOGIES6.1 Magnetoresistive RAM (MRAM) Technology6.2 MRAM Applications and Market Development6.3 Resistive RAM (ReRAM/RRAM) Technology6.4 ReRAM Development and Applications6.5 Ferroelectric RAM (FeRAM) Technology6.6 Phase Change Memory (PCM) Technology6.7 Next-Generation Memory Architectures6.8 Emerging Memory Technology Comparison 7 SUPPLY CHAIN AND MANUFACTURING ANALYSIS7.1 Global Supply Chain Mapping7.2 Manufacturing Capacity and Investment7.3 Technology Node Migration and Yield 8 REGIONAL MARKET ANALYSIS8.1 China Memory Industry Development8.2 Trade Restrictions and Geopolitical Impact8.3 Regional Market Dynamics 9 APPLICATIONS9.1 AI and Machine Learning Memory Solutions9.2 Data Center and Cloud Storage Evolution9.3 Automotive Memory and Storage Systems9.4 Edge Computing and IoT Memory9.5 Embedded Memory for Advanced Applications 10 ADVANCED PACKAGING AND INTEGRATION TECHNOLOGIES10.1 3D Integration and Packaging Innovation10.2 Hybrid Bonding and Advanced Assembly10.3 Processing-in-Memory and Near-Memory Computing 11 SUSTAINABILITY AND ENVIRONMENTAL IMPACT11.1 Memory Technology Environmental Footprint11.2 Circular Economy and End-of-Life Management 12 PRICING ANALYSIS AND ECONOMIC MODELS12.1 Historical and Current Pricing Trends12.2 Cost Structure and Economics12.3 Future Pricing Projections and Models 13 TECHNOLOGY ROADMAPS AND FUTURE DEVELOPMENTS13.1 Long-Term Memory Technology Vision13.2 Breakthrough Technologies and Research13.3 System-Level Integration Evolution 14 COMPANY PROFILES (154 Company Profiles) 3D Plus 4DS Memory Adata Technology Advantest Corporation Alliance Memory AMD Amkor Technology Analog Devices AP Memory Applied Materials ASE Group ASM International ASML Holding Avalanche Technology BeSang Inc. Besi Camtek Ltd. Canon Inc. CXMT Cisco Systems Crossbar Inc. Dell Technologies Dosilicon Etron Technology ESMT Everspin Technologies EVG Ferroelectric Memory Company Fidelix Fudan Microelectronics Fujitsu Limited Giantec Semiconductor GigaDevice Semiconductor GlobalFoundries Google LLC GSI Technology Hanmi Semiconductor Hanwha Precision Machinery HFC HHGrace Hikstor Hitachi Ltd. HLMC Honeywell International HP Inc. Huawei Technologies IBM Corporation IMEC Infineon Technologies Innostar Semiconductor Innovation Memory Inston Inc. Intel Corporation Intelligent Memory ISSI JCET Group JHICC Kingston Technology Kioxia Corporation KLA Corporation Kneron Inc. Lam Research Lenovo Group Longsys Electronics Lite-On Technology Lyontek Inc. Macronix International Marvell Technology Maxio Technology Maxim Integrated MaxLinear Inc. Materion Corporation MediaTek Inc. Merck KGaA Meta Platforms Microchip Technology Micron Technology MonolithIC 3D Montage Technology Nantero Inc. Nanya Technology Naura Technology Nikon Corporation NEC Corporation Neo Semiconductor NetApp Inc. NetList Inc. Neumonda NGD Systems Nova Measuring Numem Inc. Nuvoton Technology NXP Semiconductors onsemi Onto Innovation Phison Electronics Powerchip Semiconductor Powertech Technology Puya Semiconductor Qualcomm Inc. RAAAM Memory Technologies RAMXEED Rambus Inc. Realtek Semiconductor Renesas Electronics Rohm Semiconductor Samsung Electronics SanDisk Corporation ScaleFlux For more information about this report visit About is the world's leading source for international market research reports and market data. We provide you with the latest data on international and regional markets, key industries, the top companies, new products and the latest trends. CONTACT: CONTACT: Laura Wood,Senior Press Manager press@ For E.S.T Office Hours Call 1-917-300-0470 For U.S./ CAN Toll Free Call 1-800-526-8630 For GMT Office Hours Call +353-1-416-8900

Citi Sees Micron (MU) Climbing to $130 Supported by Better DRAM Pricing
Citi Sees Micron (MU) Climbing to $130 Supported by Better DRAM Pricing

Yahoo

time16-06-2025

  • Business
  • Yahoo

Citi Sees Micron (MU) Climbing to $130 Supported by Better DRAM Pricing

Micron Technology Inc. (NASDAQ:MU) is one of the right now. On June 9, Citi analyst Christopher Danely reaffirmed his Buy rating on Micron and raised the stock's price target to $130 from the previous $110. Danely's outlook is driven by expectations of stronger DRAM pricing, which he believes will surpass initial projections. He now anticipates a quarterly price increase of at least 5%, well above the earlier forecast of 2%. This upward trend in pricing is expected to support Micron's revenue and earnings growth over the coming quarters. An automated manufacturing production line of semiconductor components on an assembly line. In response to these improving market conditions, Danely has revised his financial estimates for the company and now projects stronger sales and higher EPS for fiscal years 2025 and 2026. These higher estimates have resulted in an increase in price target. Although tariff-related developments have subsided, geopolitical tensions remain high. On June 9, Reuters reported that Chinese memory chipmaker Yangtze Memory Technologies (YMTC) filed a lawsuit in Washington, accusing Micron Technology Inc. (NASDAQ:MU) of orchestrating a disinformation campaign. The lawsuit claims Micron falsely portrayed YMTC's chips as containing spyware and posing a national security threat. Micron Technology Inc. (NASDAQ:MU) designs, develops, manufactures, and markets memory and storage products, including dynamic random-access memory (DRAM), flash memory (NAND), solid-state drives (SSDs), and High Bandwidth Memory (HBM) globally. While we acknowledge the potential of MU as an investment, we believe certain AI stocks offer greater upside potential and carry less downside risk. If you're looking for an extremely undervalued AI stock that also stands to benefit significantly from Trump-era tariffs and the onshoring trend, see our free report on the best short-term AI stock. READ NEXT: The Best and Worst Dow Stocks for the Next 12 Months and 10 Unstoppable Stocks That Could Double Your Money. Disclosure: None.

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