Latest news with #NANDflash
GSM Arena
22-05-2025
- Business
- GSM Arena
SK Hynix unveils 321-layer UFS 4.1 that is faster, thinner and more efficient than the previous gen
Memory maker SK hynix has announced the world's first 321-layer UFS 4.1 TLC NAND flash for smartphones. It's faster, more efficient and thinner to boot – perfect for the next generation of phones that will focus on slim builds and AI tools, says the company. Compared to the previous generation (which used a 238-layer design) from 2022, these new storage chips have 15% higher random read and 40% higher random write speeds. For sequential reads, they max out the interface at 4.3GB/s. On top of that, the NAND package is 0.85mm thick, down from 1mm. It doesn't sound like much, but every little bit helps if phones like the Galaxy S25 Edge become popular. Recent trends aside, the new 321-layer UFS 4.1 design is 7% more power efficient than the previous generation – less heat and more performance are always on trend. SK hynix says that the sequential read speed will improve on-device AI performance (since it will speed up loading the model to RAM), while the improved random performance will boost multitasking. The company will produce storage in two capacities – 512GB and 1TB. That's right, there isn't going to be a 256GB variant, so this will be something to look out for when choosing your next phone (like how 128GB models use UFS 3.1 now). That is a problem for next year, though – SK hynix says that it expects to win orders from smartphone makers this year and to start shipping in volume in the first three months of next year. It's not just smartphones, though, the company is also working on 321-layer designs for SSDs for consumers and data centers. Source
Yahoo
21-05-2025
- Business
- Yahoo
SK hynix Develops UFS 4.1 Solution Based on 321-High NAND
Optimized for on-device AI with best-in-class sequential reading performance, low power requirement Thickness reduced by 15% to fit into ultra-slim flagship smartphones Portfolio with world's highest 321-layer product to enhance SK hynix's leadership as full stack AI memory provider SEOUL, South Korea, May 21, 2025 /PRNewswire/ -- SK hynix Inc. (or "the company", announced today that it has developed UFS 4.1 solution product adopting the world's highest 321-layer 1Tb triple level cell 4D NAND flash for mobile applications. The development comes amid increasing requirements for high performance and low power of a NAND solution product to ensure a stable operation of on-device AI. The company expects the UFS 4.1 product, optimized for AI workload, to help enhance its memory leadership in the flagship smartphone markets. With an increase in demand for on-device AI leading to greater importance of the balance between computation capabilities and battery efficiency of a device, the mobile market is now requiring thinness and low power from a mobile device. The latest product comes with a 7% improvement in power efficiency, compared with the previous generation based on 238-high NAND and a slimmer 0.85mm thickness, down from 1mm before, to fit into a ultra-slim smartphone. The product also supports data transfer speed of 4300MB/s, the fastest sequential read* for a fourth-generation of UFS, while providing the best-in-class performance by also improving random read and write speed**, critical for multitasking, by 15% and 40%, respectively. Immediate provision of the required data for on-device AI and faster running speed and the responsivity of an application are expected to enhance user experience. * Sequential Read/Write: speed to read and write data of a file sequentially * Random Read/Write: speed to read and write data of dispersed files SK hynix plans to win customer qualification within the year and ship in volume from the first quarter of next year. The product will be provided in two capacity types – 512GB and 1TB. Ahn Hyun, President and Chief Development Officer, said that SK hynix plans to complete development of the 321-high 4D NAND-based SSD for both consumers and data centers within the year. "We are on track to expand our position as a full-stack AI memory provider in the NAND space by building a product portfolio with AI technological edge." About SK hynix Inc. SK hynix Inc., headquartered in Korea, is the world's top tier semiconductor supplier offering Dynamic Random Access Memory chips ("DRAM") and flash memory chips ("NAND flash") for a wide range of distinguished customers globally. The Company's shares are traded on the Korea Exchange, and the Global Depository shares are listed on the Luxembourg Stock Exchange. Further information about SK hynix is available at View original content to download multimedia: SOURCE SK hynix Inc.
Yahoo
16-05-2025
- Business
- Yahoo
InPsytech Joins Samsung SAFE™ IP Partner Program for Excellence in ONFI and UCIe IP Solutions
HSINCHU, May 16, 2025 /PRNewswire/ -- InPsytech, a leading provider of advanced silicon intellectual property (IP) solutions, also a member of Egis (6452 TWO) Group, is proud to announce that it has joined the Samsung SAFE™ IP Program as a partner, one of the highest honors granted to ecosystem partners within Samsung's Advanced Foundry Ecosystem (SAFE™). This recognizes InPsytech's exceptional contributions in delivering cutting-edge ONFI (Open NAND Flash Interface). InPsytech will expand IP portfolio in Samsung Foundry including UCIe IP solutions for multi-die applications and UCIe (Universal Chiplet Interconnect Express) IP solutions. The Samsung SAFE™ program is designed to foster close collaboration between Samsung Foundry and its partners, encouraging innovation and efficiency across the semiconductor design ecosystem. By honoring outstanding IP providers, Samsung highlights those who enable next-generation semiconductor performance and integration. InPsytech's ONFI IP enables high-speed, low-power NAND flash memory interfaces, widely adopted in storage and embedded applications which owns the latest version SCA (SEPARATE COMMAND ADDRESS) validation, DFE functionality support, Intelligent power management and Complete PHY+IO solution. Meanwhile, the UCIe IP solution provides high-bandwidth, low-latency chiplet-to-chiplet interconnect capabilities, facilitating seamless integration in advanced multi-die architectures and accelerating the adoption of chiplet-based system design. "We are truly honored to have been recognized as the Samsung SAFE™ IP Partner," Grace Leu, VP of Sales & Marketing of InPsytech said. "This recognition affirms our dedication to delivering industry-leading IP that meets the most demanding performance and reliability standards. We look forward to continued collaboration with Samsung to drive innovation across global semiconductor markets." Regarding this collaboration, Ben Hyo Gyuem Rhew, Vice President and Head of the Foundry IP Development Team at Samsung Electronics, stated, "This partnership highlights the strong synergy between both parties in terms of technology and market strategy. We are pleased to see this cooperation unfold and look forward to creating greater innovation together." The recognition further solidifies InPsytech's position as a trusted partner in the global semiconductor ecosystem and reinforces its commitment to advancing the design and scalability of future chip solutions. About InPsytech InPsytech is a Taiwan-based silicon IP company specializing in high-performance interface, memory, and interconnect IP solutions. The company is dedicated to empowering SoC designers through robust, scalable IP optimized for applications in AI, data centers, mobile, and edge computing. InPsytech partners with global foundries and design ecosystems to deliver IP solutions that accelerate time-to-market and enable next-generation semiconductor innovations. For more information, please visit View original content: SOURCE InPsytech
